IP Library › Granted Patent US 6,699,786
Granted Patent Utility
US 6,699,786 · Confirmation No. 9036

METHOD FOR FORMING A SEMICONDUCTOR DEVICE THAT USES A LOW RESISTANCE TUNGSTEN SILICIDE LAYER WITH A STRONG ADHERENCE TO AN UNDERLAYER

Inventor: Ziyuan Liu
Patented Case View Patent ↗ View Publication ↗
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2003-11-18 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-11-14 IDS Information Disclosure Statement (IDS) Form (SB08) 4 View
2003-11-14 FOR Foreign Reference 8 View
2003-09-25 LET. Miscellaneous Incoming Letter 2 View
2003-09-25 DRW Drawings-only black and white line drawings 1 View
2003-02-14 IDS Information Disclosure Statement (IDS) Form (SB08) 4 View
2002-12-06 TRNA Transmittal of New Application 3 View
2002-12-06 SPEC Specification 15 View
2002-12-06 CLM Claims 2 View
2002-12-06 ABST Abstract 1 View
2002-12-06 DRW Drawings-only black and white line drawings 5 View
2002-12-06 OATH Oath or Declaration filed 2 View
2002-12-06 LET. Miscellaneous Incoming Letter 1 View
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Quick Facts
Patent No.
US 6,699,786
App. No.
10/313,290
Filed
2002-12-06
Granted
2004-03-02
Pub. No.
US20030087521A1
Art Unit
2813
PTA
-120 days