Patent Assignment
Reel/Frame 014770/0236
Assignment of Assignor's Interest
Recorded: 2004-06-24
Received: 2004-06-24
Pages: 13
Assignee
FASL LLC
ONE AMD PLACE, P.O. BOX 3453, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(11)
Method of Manufacturing a Semiconductor Memory with Deuterated Materials
Application:
10/672,093 →
Memory with Improved Charge-Trapping Dielectric Layer
Application:
10/307,189 →
Memory Manufacturing Process Using Bitline Rapid Thermal Anneal
Application:
10/151,576 →
Semiconductor Memory with Deuterated Materials
Application:
10/128,771 →
Memory Manufacturing Process Using Disposable Arc for Wordline Formation
Application:
10/126,280 →
Memory Manufacturing Process with Bitline Isolation
Application:
10/118,732 →
Method of Making Memory Wordline Hard Mask Extension
Application:
10/109,516 →
Semiconductor memory with data retention liner
Application:
10/109,527 →
Liner for Semiconductor Memories and Manufacturing Method Therefor
Application:
10/109,234 →
Memory Wordline Hard Mask
Application:
10/109,235 →
Hard Mask Process for Memory Device Without Bitline Shorts
Application:
10/100,485 →