IP Library Assignment 015650/0604
Patent Assignment
Reel/Frame 015650/0604

Assignment of Assignor's Interest

Recorded: 2005-02-02 Pages: 3
Assignor
LEE, BYUNG SEOK
Executed: 2004-11-25
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAI-UEP, ICHON-SHI, KYUNGKI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Method for Forming a Gate Electrode in a Non-Volatile Memory Device
Patent: 7,259,063 →
Application: 11/010,986 →
Publication: US 2006/0057805
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 6, 2006
From: HYNIX SEMICONDUCTOR INC.
To: HYNIX SEMICONDUCTOR INC.; STMICROELECTRONICS S.R.L.
Reel/Frame 018207/0057 →
Assignment of Assignor's Interest Aug 10, 2015
From: NUMONYX B. V.
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 036319/0139 →
Change of Name Aug 10, 2015
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 036319/0271 →