IP Library Assignment 015789/0536
Patent Assignment
Reel/Frame 015789/0536

Assignment of Assignor's Interest

Recorded: 2004-09-17 Pages: 3
Assignor
PARK, SANG WOOK
Executed: 2004-06-21
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-UEP, ICHON-SHI, KYUNGKI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Method for Forming Dielectric Layer Between Gates in Flash Memory Device
Patent: 6,984,562 →
Application: 10/879,680 →
Publication: US 2005/0233521
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 6, 2006
From: HYNIX SEMICONDUCTOR INC.
To: HYNIX SEMICONDUCTOR INC.; STMICROELECTRONICS S.R.L.
Reel/Frame 018207/0057 →
Assignment of Assignor's Interest Aug 10, 2015
From: NUMONYX B. V.
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 036319/0139 →
Change of Name Aug 10, 2015
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 036319/0271 →