IP Library Assignment 016057/0168
Patent Assignment
Reel/Frame 016057/0168

Assignment of Assignor's Interest

Recorded: 2005-04-12 Pages: 4
Assignors
SHIBATA, MASATOMO
Executed: 2005-03-25
OSHIMA, YUICHI
Executed: 2005-03-25
ERI, TAKESHI
Executed: 2005-03-25
USUI, AKIRA
Executed: 2005-03-25
SUNAGAWA, HARUO
Executed: 2005-03-25
Assignees
HITACHI CABLE, LTD.
6-1 OTEMACHI 1-CHOME, CHIYODA-KU, TOKYO, JAPAN
NEC CORPORATION
7-1, SHIBA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property (1)
Porous Substrate and Fabrication Method Therefor, and Gan Series Semiconductor Layered Substrate and Fabrication Method Therefor
Patent: 7,829,913 →
Application: 10/519,152 →
Publication: US 2006/0046511
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Merger Dec 19, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034557/0622 →
Assignment of Assignor's Interest Jan 9, 2015
From: NEC CORPORATION
To: HITACHI METALS, LTD.
Reel/Frame 034673/0419 →
Transfer to Successor by Corporate Separation Jul 27, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036190/0910 →
Assignment of Assignor's Interest Feb 8, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037685/0156 →