Patent Assignment
Reel/Frame 034673/0419
Assignment of Assignor's Interest
Recorded: 2015-01-09
Pages: 2
Assignor
NEC CORPORATION
Executed: 2014-12-22
Assignee
HITACHI METALS, LTD.
2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Porous Substrate and Fabrication Method Therefor, and Gan Series Semiconductor Layered Substrate and Fabrication Method Therefor
Related Assignments
(4)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 12, 2005
From: SHIBATA, MASATOMO; OSHIMA, YUICHI; ERI, TAKESHI; USUI, AKIRA
To: HITACHI CABLE, LTD.; NEC CORPORATION
Reel/Frame 016057/0168 →
Merger
Dec 19, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034557/0622 →
Transfer to Successor by Corporate Separation
Jul 27, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036190/0910 →
Assignment of Assignor's Interest
Feb 8, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037685/0156 →