Patent Assignment
Reel/Frame 018161/0593
Assignment of Assignor's Interest
Recorded: 2006-08-23
Pages: 9
Assignors
YU, HONGYU
Executed: 2006-07-22
CHEN, JINGDE
Executed: 2006-07-25
LI, MINGFU
Executed: 2006-07-25
KWONG, DIM-LEE
Executed: 2006-07-26
BIESEMANS, SERGE
Executed: 2006-07-23
KITTL, JORGE ADRIAN
Executed: 2006-08-21
Assignee
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
KAPELDREEF 75, LEUVEN, 3001, BELGIUM
Covered Property
(1)
A Method of Forming a Yb-Doped Ni Full Silicidation Low Work Function Gate Electrode for N-Mosfet
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 23, 2007
From: YU, HONGYU; JINGDE, CHEN; LI, MINGFU; KWONG, DIM-LEE
To: NATIONAL UNIVERSITY OF SINGAPORE (NUS); TEXAS INSTRUMENTS INCORPORATED
Reel/Frame 018928/0786 →
Assignment of Assignor's Interest
Jun 18, 2009
From: NATIONAL UNIVERSITY OF SINGAPORE
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC)
Reel/Frame 022843/0470 →