Patent Assignment
Reel/Frame 022843/0470
Assignment of Assignor's Interest
Recorded: 2009-06-18
Pages: 3
Assignor
NATIONAL UNIVERSITY OF SINGAPORE
Executed: 2009-05-18
Assignee
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC)
KAPELDREEF 75, LEUVEN, 3001, BELGIUM
Covered Property
(1)
A Method of Forming a Yb-Doped Ni Full Silicidation Low Work Function Gate Electrode for N-Mosfet
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 23, 2006
From: YU, HONGYU; CHEN, JINGDE; LI, MINGFU; KWONG, DIM-LEE
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
Reel/Frame 018161/0593 →
Assignment of Assignor's Interest
Feb 23, 2007
From: YU, HONGYU; JINGDE, CHEN; LI, MINGFU; KWONG, DIM-LEE
To: NATIONAL UNIVERSITY OF SINGAPORE (NUS); TEXAS INSTRUMENTS INCORPORATED
Reel/Frame 018928/0786 →