Patent Assignment
Reel/Frame 018928/0786
Assignment of Assignor's Interest
Recorded: 2007-02-23
Pages: 9
Assignors
YU, HONGYU
Executed: 2006-07-22
JINGDE, CHEN
Executed: 2006-07-25
LI, MINGFU
Executed: 2006-07-25
KWONG, DIM-LEE
Executed: 2006-07-26
BIESEMANS, SERGE
Executed: 2006-07-23
KITTL, JORGE ADRIAN
Executed: 2006-08-21
Assignees
NATIONAL UNIVERSITY OF SINGAPORE (NUS)
10 KENT RIDGE CRESCENT, SINGAPORE, 117576, SINGAPORE
TEXAS INSTRUMENTS INCORPORATED
P.O. BOX 655474, MS 3999, DALLAS, TEXAS, 73265
Covered Property
(1)
A Method of Forming a Yb-Doped Ni Full Silicidation Low Work Function Gate Electrode for N-Mosfet
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 23, 2006
From: YU, HONGYU; CHEN, JINGDE; LI, MINGFU; KWONG, DIM-LEE
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
Reel/Frame 018161/0593 →
Assignment of Assignor's Interest
Jun 18, 2009
From: NATIONAL UNIVERSITY OF SINGAPORE
To: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC)
Reel/Frame 022843/0470 →