Patent Assignment
Reel/Frame 019047/0677
Assignment of Assignor's Interest
Recorded: 2007-03-22
Received: 2007-03-22
Pages: 6
Assignor
ADVANCED MICRO DEVICES, INC.
Executed: 2007-01-31
Assignee
SPANSION INC.
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CA, 94088-3453, UNITED STATES
Covered Properties
(35)
SO2 Treatment of Oxidized Cuo for Copper Sulfide Formation of Memory Element Growth
Application:
10/957,247 →
Photosensitive Polymeric Memory Elements
Application:
10/951,370 →
Cus Formation by Anodic Sulfide Passivation of Copper Surface
Application:
10/885,944 →
Control of Memory Arrays Utilizing Zener Diode-Like Devices
Application:
10/882,538 →
Post Cmp Precursor Treatment
Application:
10/726,829 →
Dielectric Pattern Formation for Organic Electronic Devices
Application:
10/726,868 →
Sidewall Formation for High Density Polymer Memory Element Array
Application:
10/699,903 →
Memory Element Formation with Photosensitive Polymer Dielectric
Application:
10/700,021 →
Organic Memory Cell Formation on Ag Substrate
Application:
10/676,612 →
Self Assembly of Conducting Polymer for Formation of Polymer Memory Cell
Application:
10/677,042 →
Silicon Containing Material for Patterning Polymeric Memory Element
Application:
10/614,484 →
Polymer Memory Device Formed in via Opening
Application:
10/614,397 →
Photosensitive Polymeric Memory Elements
Application:
10/405,272 →
Apparatus and Method for a Sense Amplifier Circuit That Samples and Holds a Reference Voltage
Application:
10/389,149 →
Spin on Polymers for Organic Memory Devices
Application:
10/385,375 →
Method and System for Testing Tunnel Oxide on a Memory-Related Structure
Application:
10/339,536 →
Selective Formation of Top Memory Electrode by Electroless Formation of Conductive Materials
Application:
10/314,837 →
Methods of Forming Passive Layers in Organic Memory Cells
Application:
10/313,494 →
Method of Forming Copper Sulfide for Memory Cell
Application:
10/314,060 →
Method for Producing a Low Defect Homogeneous Oxynitride
Application:
10/306,382 →
Mocvd Formation of CU2S
Application:
10/305,889 →
Control of Memory Arrays Utilizing Zener Diode-Like Devices
Application:
10/287,363 →
System and Method of Forming a Passive Layer by a Cmp Process
Application:
10/284,769 →
Multi-Cell Organic Memory Element and Methods of Operating and Fabricating
Application:
10/284,946 →
Memory Cell Formation with Process for Patterning Conducting Polymer Films
Application:
10/285,183 →
Methods for Fabricating and Planarizing Dual Poly Scalable Sonos Flash Memory
Application:
10/244,369 →
Virtual Ground Silicide Bit Line Process for Floating Gate Flash Memory
Application:
10/238,412 →
Precharging Scheme for Reading a Memory Cell
Application:
10/226,912 →
Reflowable-Doped Hdp Film
Application:
10/217,403 →
Method and System for Detecting Tunnel Oxide Encroachment on a Memory Device
Application:
10/217,965 →
Method of Protecting a Stacked Gate Structure During Fabrication
Application:
10/217,807 →
2BIT/Cell Architecture for Floating Gate Flash Memory Product and Associated Method
Application:
10/180,673 →
Process to Improve the Vss Line Formation for High Density Flash Memory and Related Structure Associated Therewith
Application:
10/179,723 →
Innovative Narrow Gate Formation for Floating Gate Flash Technology
Application:
10/178,106 →
Method of Detecting and Distinguishing Stack Gate Edge Defects at the Source or Drain Junction
Application:
10/126,193 →