Photosensitive polymeric memory elements
View Patent ↗A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.
1. An organic memory cell, comprising:
at least two electrodes;
a passive layer comprising a conductivity facilitating compound adjacent to one of the electrodes; and
an organic semiconductor layer positioned between the two electrodes, the organic semiconductor layer comprising from about 75% to about 99.99% by weight of at least one of a conjugated organic polymer, a conjugated organometallic polymer, a buckyball, and a carbon nanotube and from about 0.01% to about 25% by weight of at least one photosensitive compound.
2. The organic memory cell of claim 1 , wherein the organic semiconductor layer comprising from about 90% to about 99.5% by weight of at least one of a conjugated organic polymer, a conjugated organometallic polymer, a buckyball, and a carbon nanotube and from about 0.5% to about 10% by weight of at least one photosensitive compound.
3. The organic memory cell of claim 1 , wherein the photosensitive compound comprises at least one selected from the group consisting of aromatic substituted halohydrocarbons, halo-substituted sulfur containing compounds, haloheterocyclic compounds, azides, triazines, sulfonated esters, sulfonated ketones, halonium salts, quarternary ammonium salts, phosphonium salts, arsonium salts, aromatic sulfonium salts, aryl sulfonium salts, alkyl sulfonium salts, and sulfoxonium salts or seleonium salts and alkylsulfonium salts.
4. The organic memory cell of claim 1 , wherein the organic semiconductor layer has a thickness of about 0.001 μm or more and abut 5 μm or less and the passive layer has a thickness of about 2 Å or more and about 0.1 μm or less.
5. The organic memory cell of claim 1 , wherein the conductivity facilitating compound comprises at least one selected from the group consisting of copper sulfide, copper oxide, manganese oxide, titanium dioxide, indium oxide, silver sulfide, gold sulfide, nickel arsenide, cobalt arsenide, and iron oxide.
6. The organic memory cell of claim 1 , wherein the first electrode and the second electrode independently comprise at least one selected from the group consisting of aluminum, chromium, copper, germanium, gold, magnesium, manganese, indium, iron, nickel, palladium, platinum, silver, titanium, zinc, and alloys thereof; indium-tin oxide; polysilicon; doped amorphous silicon; and metal silicides.
7. The organic memory cell of claim 1 , wherein the organic semiconductor layer comprises at least one conjugated organic polymer selected from the group consisting of polyacetylene; polyphenylacetylene; polydiphenylacetylene; polyaniline; poly(p-phenylene vinylene); polythiophene; polyporphyrins; porphyrinic macrocycles, thiol derivatized polyporphyrins; polymetallocenes, polyphthalocyanines; polyvinylenes; and polystiroles.
8. An organic memory cell, comprising:
at least two electrodes;
a passive layer comprising a conductivity facilitating compound adjacent to one of the electrodes; and
an organic semiconductor layer positioned between the two electrodes, the organic semiconductor layer comprising from about 85% to about 99.9% by weight of at least one of a conjugated organic polymer, a conjugated organometallic polymer, a buckyball, and a carbon nanotube and from about 0.1% to about 15% by weight of at least one photosensitive compound.
9. The organic memory cell of claim 8 , wherein the organic semiconductor layer has a thickness of about 0.001 μm or more and about 5 μm or less and the passive layer has a thickness of about 2 Å or more and about 0.1 μm or less.
10. The organic memory cell of claim 8 , wherein at least one of the electrodes comprises copper.
11. The organic memory cell of claim 8 , wherein the photosensitive compound comprises at least one selected from the group consisting of aromatic substituted halohydrocarbons, halo-substituted sulfur containing compounds, haloheterocyclic compounds, azides, triazines, sulfonated esters, sulfonated ketones, halonium salts, quarternary ammonium salts, phosphonium salts, arsonium salts, aromatic sulfonium salts, aryl sulfonium salts, alkyl sulfonium salts, sulfoxonium salts, seleonium salts, and alkylsulfonium salts.
12. The organic memory cell of claim 8 , wherein the conductivity facilitating compound comprises at least one selected from the group consisting of copper sulfide, manganese oxide, silver sulfide, gold sulfide, nickel arsenide, and cobalt arsenide.
13. The organic memory cell of claim 8 , wherein the first electrode and the second electrode independently comprise at least one selected from the group consisting of aluminum, copper, germanium, gold, indium, nickel, palladium, platinum, silver, and titanium.
14. The organic memory cell of claim 8 , wherein the organic semiconductor layer comprises a conjugated organic polymer.
15. The organic memory cell of claim 8 , wherein the organic semiconductor layer comprises a carbon nanotube.
16. An organic memory cell, comprising:
at least two electrodes;
a passive layer comprising a conductivity facilitating compound adjacent to one of the electrodes; and
an organic semiconductor layer positioned between the two electrodes, the organic semiconductor layer comprising from about 75% to about 99.99% by weight of a conjugated organic polymer and from about 0.01% to about 25% by weight of at least one photosensitive compound.
17. The organic memory cell of claim 16 , wherein the organic semiconductor layer comprises at least one conjugated organic polymer selected from the group consisting of polyacetylene; polyphenylacetylene; polydiphenylacetylene; polyaniline; poly(p-phenylene vinylene); polythiophene; polyvinylenes; and polystiroles.
18. The organic memory cell of claim 16 , wherein the photosensitive compound comprises at least one selected from the group consisting of aromatic substituted halohydrocarbons, halo-substituted sulfur containing compounds, haloheterocyclic compounds, azides, triazines, sulfonated esters, sulfonated ketones, halonium salts, seleonium salts and alkylsulfonium salts.
19. The organic memory cell of claim 16 , wherein the photosensitive compound comprises at least one selected from the group consisting of quaternary ammonium salts, phosphonium salts, arsonium salts, aromatic sulfonium salts, aryl sulfonium salts, alkyl sulfonium salts, and sulfoxonium salts.
20. The organic memory cell of claim 16 , wherein the organic semiconductor layer comprises from about 90% to about 99.5% by weight of a conjugated organic polymer and from about 0.5% to about 10% by weight of at least one photosensitive compound.