Patent Assignment
Reel/Frame 021076/0845
Assignment of Assignor's Interest
Recorded: 2008-06-11
Pages: 4
Assignor
HITACHI, LTD.
Executed: 2008-06-02
Assignee
RENESAS TECHNOLOGY CORP.
6-2, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, JAPAN
Covered Properties
(18)
Semiconductor Memory Device
Patent:
5,079,603 →
Application:
07/517,386 →
Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,300,802 →
Application:
07/704,739 →
Semiconductor Memory Device
Patent:
5,189,497 →
Application:
07/765,065 →
Method of Manufacturing Eeprom Memory Device
Patent:
5,340,760 →
Application:
07/992,473 →
Method of Making Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,407,853 →
Application:
08/179,960 →
Method of Manufacturing a Semiconductor Device
Patent:
5,472,891 →
Application:
08/260,229 →
Method of Making an Eprom with Peripheral Transistor
Patent:
5,604,142 →
Application:
08/419,232 →
A Semiconductor Memory Device Constituted by Single Transistor Type Non-Volatile Cells and Facilitated for Both Electrical Erasing and Writing of Data
Patent:
5,629,541 →
Application:
08/422,940 →
Semiconductor Integrated Circuit Device Having Single-Element Type Nonvolatile Memory Elements
Patent:
5,656,839 →
Application:
08/422,941 →
Method of Manufacturing a Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,656,522 →
Application:
08/451,268 →
Method of Manufacturing a Semiconductor Ic Device Having Single Transistor Type Nonvolatile Memory Cells
Patent:
5,904,518 →
Application:
08/885,184 →
Semiconductor Memory Device Having Deterioration Determining Function
Patent:
5,978,941 →
Application:
08/913,338 →
Non-Volatile Semiconductor Memory Device
Patent:
6,255,690 →
Application:
09/282,204 →
Semiconductor Memory Device Having Deterioration Determining Function
Patent:
6,223,311 →
Application:
09/432,389 →
Method of Manufacturing a Semiconductor Device Having Non-Volatile Memory Cell Portion with Single Transistor Type Memory Cells and Peripheral Portion with Misfets
Method of Manufacturing a Semiconductor Memory Device Having a Non-Volatile Memory Cell Portion with Single Misfet Transistor Type Memory Cells and a Peripheral Circuit Portion with Misfets
Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Method of Manufacturing a Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 11, 1997
From: KATAYAMA, KUNIYAMA; TAMURA, TAKAYUKI; NAITO, MASASHI; SHIOTA, SHIGEMASA
To: HITACHI, LTD.
Reel/Frame 008892/0596 →
Assignment of Assignor's Interest
Jul 1, 2008
From: RENESAS TECHNOLOGY CORP.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 021172/0367 →