Patent Assignment
Reel/Frame 021172/0367
Assignment of Assignor's Interest
Recorded: 2008-07-01
Pages: 10
Assignor
RENESAS TECHNOLOGY CORP.
Executed: 2008-06-24
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, DEMOCRATIC PEOPLE'S REPUBLIC OF
Covered Properties
(36)
Semiconductor Memory Device
Patent:
5,079,603 →
Application:
07/517,386 →
Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,300,802 →
Application:
07/704,739 →
Semiconductor Memory Device
Patent:
5,189,497 →
Application:
07/765,065 →
Method of Manufacturing Eeprom Memory Device
Patent:
5,340,760 →
Application:
07/992,473 →
Method of Making Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,407,853 →
Application:
08/179,960 →
Non-Volatile Memory Programming at Arbitrary Timing Based on Current Requirements
Patent:
5,422,856 →
Application:
08/203,303 →
Method of Manufacturing a Semiconductor Device
Patent:
5,472,891 →
Application:
08/260,229 →
Method of Making an Eprom with Peripheral Transistor
Patent:
5,604,142 →
Application:
08/419,232 →
A Semiconductor Memory Device Constituted by Single Transistor Type Non-Volatile Cells and Facilitated for Both Electrical Erasing and Writing of Data
Patent:
5,629,541 →
Application:
08/422,940 →
Semiconductor Integrated Circuit Device Having Single-Element Type Nonvolatile Memory Elements
Patent:
5,656,839 →
Application:
08/422,941 →
Method of Manufacturing a Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Patent:
5,656,522 →
Application:
08/451,268 →
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Patent:
5,870,218 →
Application:
08/841,612 →
Method of Manufacturing a Semiconductor Ic Device Having Single Transistor Type Nonvolatile Memory Cells
Patent:
5,904,518 →
Application:
08/885,184 →
Semiconductor Memory Device Having Deterioration Determining Function
Patent:
5,978,941 →
Application:
08/913,338 →
Non-Volatile Semiconductor Memory Device for Storing Multivalue Information by Controlling Erase and Plural Write States of Each Memory Cell
Patent:
5,982,667 →
Application:
09/096,457 →
Non-Volatile Semiconductor Memory Device
Patent:
6,255,690 →
Application:
09/282,204 →
Non-Volatile Semiconductor Memory Device Having Plural Memory Cells Which Store Multi-Value Information
Patent:
6,181,603 →
Application:
09/339,960 →
Semiconductor Memory Device Having Deterioration Determining Function
Patent:
6,223,311 →
Application:
09/432,389 →
Variable Capacity Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Patent:
6,396,736 →
Application:
09/715,106 →
Semiconductor Memory Device Having Deterioration Determining Function
Method of Manufacturing a Semiconductor Device Having Non-Volatile Memory Cell Portion with Single Transistor Type Memory Cells and Peripheral Portion with Misfets
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Method of Manufacturing a Semiconductor Memory Device Having a Memory Cell Portion Including Misfets with a Floating Gate and a Peripheral Circuit Portion with Misfets
Nonvolatile Memory and Method of Erasing for Nonvolatile Memory
Method of Manufacturing a Semiconductor Memory Device Having a Non-Volatile Memory Cell Portion with Single Misfet Transistor Type Memory Cells and a Peripheral Circuit Portion with Misfets
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Nonvolatile Semiconductor Memory Device for Writing Multivalued Data
Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Nonvolatile Memory and Method of Erasing for Nonvolatile Memory
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Method of Manufacturing a Semiconductor Integrated Circuit Device Having Single-Element Type Non-Volatile Memory Elements
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Nonvolatile Semiconductor Memory Device for Writing Multivalued Data
Nonvolatile Semiconductor Memory Device for Writing Multivalued Data
Nonvolatile Semiconductor Memory Device Which Stores Multi-Value Information
Application:
12/117,918 →
Publication:
US 2009/0016102
Related Assignments
(12)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 13, 1995
From: SASAKI, TOSHIO; TANAKA, TOSHIHIRO; KATO, MASATAKA
To: HITACHI, LTD.
Reel/Frame 007374/0104 →
Assignment of Assignor's Interest
Apr 30, 1997
From: JYOUNO, YUSUKE; KAWAHARA, TAKAYUKI; KIMURA, KATSUTAKA
To: HITACHI LTD.
Reel/Frame 008541/0020 →
Assignment of Assignor's Interest
Sep 11, 1997
From: KATAYAMA, KUNIYAMA; TAMURA, TAKAYUKI; NAITO, MASASHI; SHIOTA, SHIGEMASA
To: HITACHI, LTD.
Reel/Frame 008892/0596 →
Assignment of Assignor's Interest
Jul 20, 2000
From: KOBAYASHI, SHINICHI; KAI, YOSHIHIDE
To: MITSUBISHI DENKI KABUSHIKI KAISHA
Reel/Frame 010954/0262 →
Assignment of Assignor's Interest
Sep 26, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014569/0585 →
Assignment of Assignor's Interest
May 15, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 019287/0754 →
Assignment of Assignor's Interest
May 15, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 019287/0688 →
Assignment of Assignor's Interest
May 15, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 019287/0746 →
Assignment of Assignor's Interest
May 15, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 019287/0750 →
Assignment of Assignor's Interest
Jun 3, 2008
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 021029/0409 →
Assignment of Assignor's Interest
Jun 11, 2008
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 021076/0845 →
Assignment of Assignor's Interest
Jun 12, 2008
From: MITSUBISHI DENKI KABUSHIKI KAISHA
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 021118/0337 →