IP Library Assignment 021737/0075
Patent Assignment
Reel/Frame 021737/0075

Assignment of Assignor's Interest

Recorded: 2008-10-24 Pages: 2
Assignor
LEE, CHIA HAO
Executed: 2007-12-03
Assignee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANG JIANG RD., PUDONG NEW AREA, SHANGHAI, 201203, CHINA
Covered Property (1)
Method for Forming P-Type Lightly Doped Drain Region Using Germanium Pre-Amorphous Treatment
Patent: 8,318,571 →
Application: 12/258,375 →
Publication: US 2010/0003799
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 14, 2013
From: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
To: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
Reel/Frame 029625/0763 →