Patent Assignment
Reel/Frame 021939/0390
Assignment of Assignor's Interest
Recorded: 2008-12-08
Pages: 3
Assignor
CHANG, HEON YONG
Executed: 2008-11-26
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUB, ICHEON-SI, KYOUNGKI-DO, KOREA, REPUBLIC OF
Covered Property
(1)
Phase Change Memory Device Having Dielectric Layer for Isolating Contact Structure Formed by Growth, Semiconductor Device Having the Same, and Methods for Manufacturing the Devices
Related Assignments
(3)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name
May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
Assignment of Assignor's Interest
May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
Corrective Assignment to Correct the Assignee Is Hynix Semiconductor Inc. Not Hynix-Semiconductor Inc. There Is No Hyphen in the Name. Previously Recorded on Reel 67328 Frame 814. Assignor(S) Hereby Confirms the Change of Name.
May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →