Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices

1. A phase change memory device comprising:

a semiconductor substrate having an impurity region;

an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes defined therein exposing the impurity region;

switching elements formed in the contact holes; and

sidewall spacers interposed between the switching elements and the interlayer dielectric, wherein the interlayer dielectric applies the tensile stress to the semiconductor substrate, and the sidewall spacers are formed as a dielectric layer applying a compressive stress to the semiconductor substrate.

2. The phase change memory device according to claim 1 , wherein the interlayer dielectric comprises at least one of a boro-phosphor silicate glass (BPSG), a phosphor silicate glass (PSG), an undoped silicate glass (USG), and a flowable oxide (FOX).

3. The phase change memory device according to claim 1 , wherein the sidewall spacers comprise a silicon nitride layer.

4. The phase change memory device according to claim 1 , wherein the switching elements comprise PN diodes having a single crystal epitaxial layer.

5. The phase change memory device according to claim 1 , further comprising:

heater electrodes formed on the switching elements;

phase change patterns formed on the heater electrodes; and

top electrodes formed on the phase change patterns.

6. A phase change memory device comprising:

a semiconductor substrate having an impurity region;

a first interlayer dielectric formed on the semiconductor substrate and having contact holes defined therein exposing predetermined portions of the impurity region;

sidewall spacers formed on sidewalls of the contact holes of the first interlayer dielectric;

PN diodes formed in the contact holes;

a second interlayer dielectric formed on the PN diodes and the first interlayer dielectric;

heater electrodes formed on the PN diodes and electrically connected to the PN diodes;

phase change patterns formed on the second interlayer dielectric and the heater electrodes, wherein the phase change patterns are electrically connected to the heater electrodes; and

top electrodes formed on the phase change patterns,

wherein the first interlayer dielectric applies tensile stress to the semiconductor substrate, and the side wall spacers are formed as a dielectric layer applying compressive stress to the semiconductor substrate.

7. The phase change memory device according to claim 6 , wherein the first interlayer dielectric comprises at least one of a boro-phosphor silicate glass (BPSG), a phosphor silicate glass (PSG), an undoped silicate glass (USG), and a flowable oxide (FOX).

8. The phase change memory device according to claim 7 , wherein the sidewall spacers comprise at least one of a silicon nitride layer and a silicon oxide layer.

9. The phase change memory device according to claim 6 , wherein the second interlayer dielectric comprises a silicon nitride layer.

10. A semiconductor device comprising:

a semiconductor substrate having a conductive region;

an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes defined therein exposing the conductive region;

a conductive layer formed in the contact holes; and

sidewall spacers interposed between the conductive layer and the interlayer dielectric, wherein the interlayer dielectric applies the tensile stress to the semiconductor substrate, and the sidewall spacers are formed as a dielectric layer applying a compressive stress to the semiconductor substrate.

11. The semiconductor device according to claim 10 , wherein the conductive layer comprises a single crystal epitaxial layer.

12. The semiconductor device according to claim 10 , wherein the interlayer dielectric comprises at least one of a boro-phosphor silicate glass (BPSG), a phosphor silicate glass (PSG), an undoped silicate glass (USG), and a flowable oxide (FOX).

13. The semiconductor device according to claim 10 , wherein the sidewall spacers comprise a silicon nitride layer.