Patent Assignment
Reel/Frame 022804/0672
Assignment of Assignor's Interest
Recorded: 2009-06-10
Received: 2009-06-10
Pages: 8
Assignor
HITACHI ULSI SYSTEMS CO., LTD.
Executed: 2008-08-07
Assignee
HITACHI, LTD.
6-6, MARUNOUCHI 1-CHOME, CHIYODA-KU, TOKYO, JPX, JAPAN
Covered Properties
(15)
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
12/007,336 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/714,867 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/330,220 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
11/101,504 →
Exhaust Positioned at the Downstream End of a Glass Melting Furnace
Application:
10/712,904 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
10/683,260 →
Semiconductor Integrated Circuit Device, Process for Fabricating the Same, and Apparatus for Fabricating the Same
Application:
10/376,329 →
Semiconductor Device Formed in a Rectangle Region on a Semiconductor Substrate Including a Voltage Generating Circuit
Application:
10/254,980 →
Semiconductor Device
Application:
10/231,286 →
Semiconductor Integrated Circuit Device Having an Optimal Circuit Layout to Ensure Stabilization of Internal Source Voltages Without Lowering Circuit Functions and/or Operating Performance
Application:
10/142,897 →
Reference Voltage Generator Permitting Stable Operation
Application:
10/012,522 →
Semiconductor Memory Device and Defect Remedying Method Thereof
Application:
10/000,032 →
Semiconductor Device
Application:
09/964,669 →
Semiconductor Memory Device and Memory System
Application:
09/939,677 →
Semiconductor Intergrated Circuit Device Having a First Wiring Strip Exposed Through a Connecting Hole, a Transition-Metal Film in the Connecting Hole and an Aluminum Wiring Strip Thereover, and a Transition-Metal Nitride Film Between the Aluminum Wiring Strip And
Application:
09/899,921 →