IP Library Assignment 023325/0298
Patent Assignment
Reel/Frame 023325/0298

Assignment of Assignor's Interest

Recorded: 2009-09-21 Pages: 4
Assignors
KOUKITU, AKINORI
Executed: 2009-09-10
KUMAGAI, YOSHINAO
Executed: 2009-09-10
FUJII, TETSUO
Executed: 2009-09-10
YOSHII, NAOKI
Executed: 2009-09-10
Assignees
ROHM CO., LTD.
21, SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO-SHI, KYOTO 615-8585, JAPAN
TOKYO ELECTRON LIMITED
3-1 AKASAKA 5-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property (1)
Epitaxial Growth Method of a Zinc Oxide Based Semiconductor Layer, Epitaxial Crystal Structure, Epitaxial Crystal Growth Apparatus, and Semiconductor Device
Patent: 8,822,263 →
Application: 12/493,765 →
Publication: US 2010/0006836
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Oct 12, 2016
From: TOKYO ELECTRON LIMITED
To: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY; ROHM CO., LTD.
Reel/Frame 039997/0971 →