Assignment of Assignor's Interest

Recorded: 2016-10-12 Pages: 3

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Assignor

TOKYO ELECTRON LIMITED

Executed: 2016-10-08

Assignees

NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

3-8-1, HARUMI-CHO, FUCHU-SHI, TOKYO, JAPAN

ROHM CO., LTD.

21, SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO-SHI, KYOTO, 615-8585, JAPAN

Covered Property (1)

Epitaxial Growth Method of a Zinc Oxide Based Semiconductor Layer, Epitaxial Crystal Structure, Epitaxial Crystal Growth Apparatus, and Semiconductor Device

Patent: 8,822,263 →

Application: 12/493,765 →

Publication: US 2010/0006836

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.

Assignment of Assignor's Interest Sep 21, 2009

From: KOUKITU, AKINORI; KUMAGAI, YOSHINAO; FUJII, TETSUO; YOSHII, NAOKI

To: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY; ROHM CO., LTD.; TOKYO ELECTRON LIMITED

Reel/Frame 023325/0298 →