IP Library Assignment 023431/0370
Patent Assignment
Reel/Frame 023431/0370

Assignment of Assignor's Interest

Recorded: 2009-10-27 Pages: 3
Assignor
ARENA, CHANTEL
Executed: 2009-09-22
Assignee
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, S.A.
CHEMIN DES FRANQUES, PARC TECHNOLOGIQUE DES FONTAINES, BERNIN, 38190, FRANCE
Covered Property (1)
Methods of Forming Layers of Semiconductor Material Having Reduced Lattice Strain, Semiconductor Structures, Devices and Engineered Substrates Including Same
Patent: 8,278,193 →
Application: 12/576,116 →
Publication: US 2010/0109126
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Corrective Assignment to Correct the the Inventors First Name Is Misspelled on the Notice of Recordation of Assignment Previously Recorded on Reel 023431 Frame 0370. Assignor(S) Hereby Confirms the Assignment to S.O.I.Tec Silicon on Insulator Technologies, S.a. Dated 9/25/2009. Mar 14, 2010
From: ARENA, CHANTAL
To: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, S.A.
Reel/Frame 024076/0389 →
Change of Name Feb 28, 2012
From: S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES; CHEMIN DES FRANQUES; PARC TECHNOLOGIES DES FONTAINES; BERNIN. FRANCE 38190
To: SOITEC
Reel/Frame 028138/0895 →