Patent Assignment
Reel/Frame 024120/0505
Assignment of Assignor's Interest
Recorded: 2010-02-18
Received: 2010-03-23
Pages: 30
Assignor
SIEMENS AKTIENGESELLSCHAFT
Executed: 1999-03-31
Assignee
INFINEON TECHNOLOGIES AG
ST.-MARTIN-STR. 53, MUNICH, DEX, 81541, GERMANY
Covered Properties
(7)
Cvd Method of Producing in Situ-Doped Polysilicon Layers and Polysilicon Layered Structures
Application:
10/226,764 →
Integrated Circuit Having at Least Two Vertical Mos Transistors and Method for Manufacturing Same
Application:
10/081,902 →
O-Aminophenolcarboxylic Acid and O-Aminothiophenolcarboxylic Acid
Application:
09/901,218 →
Method of Structuring Layers with a Polysilicon Layer and an Overlying Metal or Metal Silicide Layer Using a Three Step Etching Process with Fluorine, Chlorine, Bromine Containing Gases
Application:
09/884,188 →
Process for Producing an Integrated Semiconductor Memory Configuration
Application:
09/883,011 →
Method for the Production of a Dram Cell Configuration
Application:
09/851,051 →
Dram Including an Address Space Divided into Individual Blocks Having Memory Cells Activated by Row Address Signals
Application:
09/677,368 →