Patent Assignment
Reel/Frame 025423/0255
Assignment of Assignor's Interest
Recorded: 2010-11-25
Received: 2010-11-25
Pages: 13
Assignor
SAMSUNG ELECTRONICS CO., LTD.
Executed: 2010-10-26
Assignee
MOSAID TECHNOLOGIES INCORPORATED
11 HINES ROAD, SUITE 203, OTTAWA, CAX, K2K 2X1, CANADA
Covered Properties
(10)
Method of Repairing a Failed Wordline
Application:
10/864,173 →
Nonvolatile Semiconductor Memory Device and Manufacturing Method Thereof
Application:
10/253,133 →
Non-Volatile Semiconductor Memory Device
Application:
10/231,602 →
Method for Fabricating a Capacitor of a Semiconductor Device and a Capacitor Made Thereby
Application:
10/142,773 →
Method of Forming T-Shaped Isolation Layer, Method of Forming Elevated Salicide Source/Drain Region Using the Same, and Semiconductor Device Having T-Shaped Isolation Layer
Application:
10/044,991 →
Semiconductor Memory Device with Redundancy Logic Cell and Repair Method
Application:
09/929,930 →
Methods of Forming Self-Aligned Contact Pads on Electrically Conductive Lines
Application:
09/892,125 →
Method of Forming Interlevel Dielectric Layer of Semiconductor Device
Application:
09/885,091 →
Bit Line Sensing Control Circuit for a Semiconductor Memory Device and Layout of the Same
Application:
09/882,209 →
Non-Volatile Semiconductor Memory Device
Application:
09/847,115 →