IP Library Granted Patent US 6,624,496
Granted Patent Utility
US 6,624,496 · Confirmation No. 1881

METHOD OF FORMING T-SHAPED ISOLATION LAYER, METHOD OF FORMING ELEVATED SALICIDE SOURCE/DRAIN REGION USING THE SAME, AND SEMICONDUCTOR DEVICE HAVING T-SHAPED ISOLATION LAYER

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Code Description Pages PDF
2006-08-24 1449 List of References cited by applicant and considered by examiner 1 View
2003-07-02 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-07-02 LET. Miscellaneous Incoming Letter 1 View
2002-01-15 TRNA Transmittal of New Application 4 View
2002-01-15 A.PE Preliminary Amendment 4 View
2002-01-15 SPEC Specification 17 View
2002-01-15 CLM Claims 5 View
2002-01-15 ABST Abstract 1 View
2002-01-15 DRW Drawings-only black and white line drawings 9 View
2002-01-15 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,624,496
App. No.
10/044,991
Filed
2002-01-15
Granted
2003-09-23
Pub. No.
US20020090795A1
Examiner
MAI, ANH D
Art Unit
2814
PTA
0 days