Patent Assignment
Reel/Frame 025423/0274
Assignment of Assignor's Interest
Recorded: 2010-11-25
Received: 2010-11-25
Pages: 13
Assignor
SAMSUNG ELECTRONICS CO., LTD.
Executed: 2010-10-26
Assignee
MOSAID TECHNOLOGIES INCORPORATED
11 HINES ROAD, SUITE 203, OTTAWA, CAX, K2K 2X1, CANADA
Covered Properties
(18)
Capacitor of an Integrated Circuit Device and Method of Manufacturing the Same
Application:
11/079,216 →
Redundancy Circuit in Semiconductor Memory Device Having a Multiblock Structure
Application:
10/889,194 →
Capacitor of an Integrated Circuit Device and Method of Manufacturing the Same
Application:
10/682,489 →
Capacitor of an Integrated Circuit Device and Method of Manufacturing the Same
Application:
10/681,344 →
Semiconductor Device Having Trench Isolation Structure and Method of Forming Same
Application:
10/290,235 →
Memory System Capable of Increasing Utilization Efficiency of Semiconductor Memory Device and Method of Refreshing the Semiconductor Memory Device
Application:
10/151,877 →
Capacitor of an Integrated Circuit Device and Method of Manufacturing the Same
Application:
10/141,881 →
Pecvd Method of Forming a Tungsten Silicide Layer on a Polysilicon Layer
Application:
10/101,776 →
Semiconductor Device Having Trench Isolation Structure and Method of Forming Same
Application:
10/043,330 →
Method for Depositing a Tungsten Silicide Layer
Application:
10/039,165 →
Method of Forming Semiconductor Device Having a Gaa Type Transistor
Application:
10/022,934 →
Wiring Structure of Semiconductor Device
Application:
10/006,303 →
Nonvolatile Semiconductor Memory Device Having Changeable Spare Memory Address
Application:
09/996,240 →
Reference Voltage Generator
Application:
09/988,657 →
Wafer Polishing Slurry and Chemical Mechanical Polishing (Cmp) Method Using the Same
Application:
09/977,239 →
Pattern Formation Method Using Two Alternating Phase Shift Masks
Application:
09/977,323 →
Transfer Circuit of Semiconductor Device and Structure Thereof
Application:
09/948,201 →
Semiconductor Memory Device Having a Memory Block with a Decreased Capacitance
Application:
09/835,812 →