Merger

Recorded: 2011-03-21 Pages: 22

Assignor

RENESAS TECHNOLOGY CORP.

Executed: 2010-04-01

Assignee

RENESAS ELECTRONICS CORPORATION

1753 SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, JAPAN

Covered Properties (4)

Method of Fabricating Semiconductor Integrated Circuit Device

Patent: 7,214,577 →

Application: 11/006,702 →

Publication: US 2005/0118805

Method of Fabricating Semiconductor Integrated Circuit Device with 99.99 Wt% Cobalt

Patent: 7,314,830 →

Application: 11/783,187 →

Publication: US 2007/0184603

Method of Fabricating Semiconductor Integrated Circuit Device

Patent: 7,553,766 →

Application: 11/950,152 →

Publication: US 2008/0090358

Method of Fabricating Semiconductor Integrated Circuit Device

Patent: 8,034,715 →

Application: 12/492,276 →

Publication: US 2009/0263943