Patent Assignment
Reel/Frame 026926/0812
Assignment of Assignor's Interest
Recorded: 2011-09-19
Received: 2011-09-19
Pages: 5
Assignor
NEWPORT FAB, LLC D/B/A JAZZ SEMICONDUCTOR, A TOWER GROUP COMPANY
Executed: 2011-06-24
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN 3-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KRX, 443-742, KOREA, REPUBLIC OF
Covered Properties
(13)
MIM capacitor high-k dielectric for increased capacitance density
Application:
12/798,386 →
Method in the fabrication of a ferroelectric memory device
Application:
11/922,052 →
Mim Capacitor High-K Dielectric for Increased Capacitance Density
Application:
11/729,350 →
Method for Fabricating a Mim Capacitor High-K Dielectric for Increased Capacitance Density and Related Structure
Application:
11/121,360 →
Method for Fabricating a Mim Capacitor Having Increased Capacitance Density and Related Structure
Application:
10/997,638 →
Selective Fabrication of High Capacitance Density Areas in a Low Dielectric Constant Material
Application:
10/995,762 →
Method for Fabricating a High Density Composite Mim Capacitor with Flexible Routing in Semiconductor Dies
Application:
10/850,187 →
Method for Fabricating a High Density Composite Mim Capacitor with Reduced Voltage Dependence in Semiconductor Dies
Application:
10/712,067 →
High-K Dielectric Stack in a Mim Capacitor and Method for Its Fabrication
Application:
10/692,431 →
High Density Composite Mim Capacitor with Flexible Routing in Semiconductor Dies
Application:
10/447,397 →
High Density Composite Mim Capacitor with Reduced Voltage Dependence in Semiconductor Dies
Application:
10/410,937 →
Thin-film capacitors and methods for forming the same
Application:
09/772,726 →
Method for Fabrication of Ceramic Tantalum Nitride and Imporoved Structures Based Thereon
Application:
09/761,489 →