Patent Assignment
Reel/Frame 027439/0642
Assignment of Assignor's Interest
Recorded: 2011-12-23
Pages: 2
Assignor
LEE, SEUNG HYUN
Executed: 2011-12-22
Assignee
HYNIX SEMICONDUCTOR INC.
SAN 136-1, AMI-RI, BUBAL-EUP, ICHEON-SI, GYEONGGI-DO, 467-701, KOREA, REPUBLIC OF
Covered Property
(1)
Magneto-Resistive Random Access Memory (Mram) Having a Plurality of Concentrically Aligned Magnetic Tunnel Junction Layers and Concentrically Aligned Upper Electrodes Over a Lower Electrode.
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.