IP Library › Assignment 034036/0001
Patent Assignment
Reel/Frame 034036/0001

Change of Name

Recorded: 2014-10-23 Pages: 48
Assignor
HYNIX SEMICONDUCTOR INC.
Executed: 2012-03-23
Assignee
SK HYNIX INC.
2091, GYEONGCHUNG-DAERO, BUBAL-EUB, ICHEON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Property (1)
Magneto-Resistive Random Access Memory (Mram) Having a Plurality of Concentrically Aligned Magnetic Tunnel Junction Layers and Concentrically Aligned Upper Electrodes Over a Lower Electrode.
Patent: 8,896,040 →
Application: 13/336,069 →
Publication: US 2012/0241828
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 23, 2011
From: LEE, SEUNG HYUN
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 027439/0642 →