Patent Assignment
Reel/Frame 029991/0754
Assignment of Assignor's Interest
Recorded: 2013-03-14
Pages: 4
Assignee
UBIQ SEMICONDUCTOR CORP.
9F.-6, NO.5, TAIYUAN 1ST ST., ZHUBEI CITY,, HSINCHU COUNTY, 302, TAIWAN
Covered Property
(1)
Method of Forming a Trench Gate Mosfet Having a Thick Bottom Oxide
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.