Merger

Recorded: 2019-07-04 Pages: 13

Assignor

UBIQ SEMICONDUCTOR CORP.

Executed: 2019-06-19

Assignee

UPI SEMICONDUCTOR CORP.

9F.-1, NO.5, TAIYUAN 1ST ST., ZHUBEI CITY,, HSINCHU COUNTY, 302, TAIWAN

Covered Properties (4)

Trench Gate Mosfet

Patent: 9,035,283 →

Application: 13/789,684 →

Publication: US 2014/0015041

Method of Forming a Trench Gate Mosfet Having a Thick Bottom Oxide

Patent: 8,927,369 →

Application: 13/789,692 →

Publication: US 2014/0017864

Trench Gate Mosfet

Patent: 9,406,795 →

Application: 14/497,338 →

Publication: US 2015/0008514

Method of Forming a Trench Gate Mosfet Having a Thick Bottom Oxide

Patent: 8,999,790 →

Application: 14/542,674 →

Publication: US 2015/0072493

Related Assignments (2)

Other recorded transfers of the patents in this record — the chain of ownership.