Assignment of Assignor's Interest

Recorded: 2013-07-02 Pages: 5

Assignor

Executed: 2013-06-28

Assignees

1-8, HONCHO 4-CHOME, KAWAGUCHI-SHI, SAITAMA, 332-0012, JAPAN

CANON KABUSHIKI KAISHA

3-30-2, SHIMOMARUKO, OHTA-KU, TOKYO, JAPAN

TOKYO INSTITUTE OF TECHNOLOGY

2-12-1, OOKAYAMA, MEGURO-KU, TOKYO, JAPAN

Covered Properties (3)

Amorphous Oxide and Thin Film Transistor

Patent: 10,032,930 →

Application: 12/504,116 →

Publication: US 2009/0278122

Amorphous Oxide and Thin Film Transistor

Patent: 9,947,803 →

Application: 13/097,572 →

Publication: US 2011/0201162

Switching Element

Patent: 10,032,931 →

Application: 13/243,244 →

Publication: US 2012/0012838