Switching element
A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO 3 (ZnO) m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm 2 /(V·sec) and an electron carrier concentration is less than 10 18 /cm 3 , a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
1. A switching thin film transistor device for driving LCDs or organic EL displays, comprising:
a drain electrode;
a source electrode;
a channel layer contacting the drain electrode and the source electrode,
wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO 3 (ZnO) m (wherein m is a natural number less than 6) in a crystallized state, and
the channel layer has a semi-insulating property represented by an electron mobility measured at room temperature of more than 1 cm 2 /(V·sec) and an electron carrier concentration less than 10 16 /cm 3 determined by Hall-effect measurement at room temperature;
a gate electrode; and
a gate insulating film positioned between the gate electrode and the channel layer.
2. The switching thin film transistor device according to claim 1 , wherein the gate insulating film contains one or more selected from Al 2 O 3 , Y 2 O 3 , or HfO 2 .
3. The switching thin film transistor device according to claim 1 , wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
4. The switching thin film transistor device according to claim 1 , wherein the device is one of a staggered or inverted staggered structure.