IP Library › Granted Patent US 12,300,702
Granted Patent B2
US 12,300,702 · App. 18/125,365 · Granted May 13, 2025

Semiconductor device including storage capacitor having pixel electrode, directly stacked conductive layer, and insulating layer interposed between them, wherein the stacked conductive layers extending towards the gate and source wirings/lines

Inventor: Hajime Kimura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/1225H01L27/124H01L27/1255H01L27/1288H01L28/40H01L29/4966H01L29/7869H01L33/02H01L2924/0002H10K59/1213H10K59/1216
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,300,702
App. No.
18/125,365
Granted
May 13, 2025
Kind
B2
Abstract

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

Claims (30)

1. A semiconductor device comprising a pixel comprising:

a first gate wiring including a gate electrode;

an insulating film;

a source wiring;

a pixel electrode;

a first conductive layer below the pixel electrode with the insulating film interposed therebetween; and

a second conductive layer below the insulating film and in contact with a top surface of the first conductive layer,

wherein each of the pixel electrode and the first conductive layer has a light-transmitting property,

wherein the second conductive layer has a light-shielding property,

wherein, in plan view, the first conductive layer includes a first region located at a center of the pixel, a second region extending from the first region toward the first gate wiring, a third region extending toward a second gate wiring adjacent to the first gate wiring via the pixel electrode,

wherein the second conductive layer has a fourth region that overlaps with the source wiring and a fifth region that does not overlap with the source wiring,

wherein the fifth region does not overlap with the first region and an end of the first conductive layer,

wherein the pixel electrode overlaps the first to third regions,

wherein the pixel electrode has a function as one electrode of a storage capacitor section, and

wherein the first conductive layer has a function as the other electrode of the storage capacitor section.

2. A semiconductor device comprising a pixel comprising:

a first gate wiring including a gate electrode;

an insulating film;

a source wiring;

a pixel electrode;

a first conductive layer below the pixel electrode with the insulating film interposed therebetween; and

a second conductive layer below the insulating film and in contact with a top surface of the first conductive layer,

wherein each of the pixel electrode and the first conductive layer has a light-transmitting property,

wherein the second conductive layer has a light-shielding property,

wherein, in plan view, the first conductive layer includes a first region located at a center of the pixel, a second region extending from the first region toward the first gate wiring, a third region extending toward a second gate wiring adjacent to the first gate wiring via the pixel electrode,

wherein, in plan view, the second conductive layer includes a fourth region that overlaps with the source wiring, and a fifth region that does not overlap with the source wiring and extends in a direction where the first gate wiring extends,

wherein the fifth region does not overlap with the first region and an end of the first conductive layer,

wherein the pixel electrode overlaps the first to third regions,

wherein the pixel electrode has a function as one electrode of a storage capacitor section, and

wherein the first conductive layer has a function as the other electrode of the storage capacitor section.

Priority Claims (1)
JP 2008-130162 · May 16, 2008 · national
Continuity (6)
Continuation 17480507 · Sep 21, 2021
Continuation 16750260 · Jan 23, 2020
Continuation 15186692 · Jun 20, 2016
Continuation 14584013 · Dec 29, 2014
Continuation 12434948 · May 4, 2009
Related Publication 20230223409A1 · Jul 13, 2023
References Cited (400)
US 5462887A · Gluck · 1995 [cited by applicant]
US 5545921A · Conru et al. · 1996 [cited by applicant]
US 5731856A · Kim et al. · 1998 [cited by applicant]
US 5744864A · Cillessen et al. · 1998 [cited by applicant]
US 5777380A · Otsuki · 1998 [cited by applicant]
US 5818549A · Maruyama et al. · 1998 [cited by applicant]
US 5827760A · Seo · 1998 [cited by applicant]
US 6069370A · Hayama et al. · 2000 [cited by applicant]
US 6088072A · Lee · 2000 [cited by applicant]
US 6255706B1 · Watanabe et al. · 2001 [cited by applicant]
US 6294274B1 · Kawazoe et al. · 2001 [cited by applicant]
US 6339230B1 · Lee et al. · 2002 [cited by applicant]
US 6392623B1 · Shimada · 2002 [cited by applicant]
US 6469317B1 · Yamazaki et al. · 2002 [cited by applicant]
US 6500701B2 · Higashi. et al. · 2002 [cited by applicant]
US 6563174B2 · Kawasaki et al. · 2003 [cited by applicant]
US 6653216B1 · Shimomaki et al. · 2003 [cited by applicant]
US 6654091B2 · Yoo et al. · 2003 [cited by applicant]
US 6678017B1 · Shimomaki et al. · 2004 [cited by applicant]
US 6727522B1 · Kawasaki et al. · 2004 [cited by applicant]
US 6737306B2 · Yamazaki et al. · 2004 [cited by applicant]
US 6900852B2 · Okada et al. · 2005 [cited by applicant]
US 7049190B2 · Takeda et al. · 2006 [cited by applicant]
US 7061014B2 · Hosono et al. · 2006 [cited by applicant]
US 7064346B2 · Kawasaki et al. · 2006 [cited by applicant]
US 7105868B2 · Nause et al. · 2006 [cited by applicant]
US 7211825B2 · Shih et al. · 2007 [cited by applicant]
US 7276730B2 · Yamazaki · 2007 [cited by examiner]
US 7282782B2 · Hoffman et al. · 2007 [cited by applicant]
US 7297977B2 · Hoffman et al. · 2007 [cited by applicant]
US 7316944B2 · Ahn · 2008 [cited by applicant]
US 7323356B2 · Hosono et al. · 2008 [cited by applicant]
US 7351623B2 · Ahn · 2008 [cited by applicant]
US 7385224B2 · Ishii et al. · 2008 [cited by applicant]
US 7402506B2 · Levy et al. · 2008 [cited by applicant]
US 7411209B2 · Endo et al. · 2008 [cited by applicant]
US 7439086B2 · Yamazaki et al. · 2008 [cited by applicant]
US 7449352B2 · Kim et al. · 2008 [cited by applicant]
US 7453065B2 · Saito et al. · 2008 [cited by applicant]
US 7453087B2 · Iwasaki · 2008 [cited by applicant]
US 7462862B2 · Hoffman et al. · 2008 [cited by applicant]
US 7462863B2 · Izumi · 2008 [cited by applicant]
US 7468304B2 · Kaji et al. · 2008 [cited by applicant]
US 7501293B2 · Ito et al. · 2009 [cited by applicant]
US 7575966B2 · Lai et al. · 2009 [cited by applicant]
US 7601566B2 · Sakakura et al. · 2009 [cited by applicant]
US 7608531B2 · Isa et al. · 2009 [cited by applicant]
US 7615495B2 · Fujikawa et al. · 2009 [cited by applicant]
US 7619254B2 · Lee et al. · 2009 [cited by applicant]
US 7633090B2 · Ishii · 2009 [cited by applicant]
US 7674650B2 · Akimoto et al. · 2010 [cited by applicant]
US 7691715B2 · Kaji et al. · 2010 [cited by applicant]
US 7692193B2 · Lee · 2010 [cited by applicant]
US 7732819B2 · Akimoto et al. · 2010 [cited by applicant]
US 7737517B2 · Kawamura. et al. · 2010 [cited by applicant]
US 7738048B2 · Yoshimoto · 2010 [cited by applicant]
US 7738055B2 · Egi et al. · 2010 [cited by applicant]
US 7767506B2 · Kim et al. · 2010 [cited by applicant]
US 7773194B2 · Abe et al. · 2010 [cited by applicant]
US 7795621B2 · Yamaguchi et al. · 2010 [cited by applicant]
US 7816158B2 · Yoshimoto · 2010 [cited by applicant]
US 7821613B2 · Kimura · 2010 [cited by applicant]
US 7855770B2 · Egi et al. · 2010 [cited by applicant]
US 7858971B2 · Song et al. · 2010 [cited by applicant]
US 7858984B2 · Ahn · 2010 [cited by applicant]
US 7859525B2 · Takatori et al. · 2010 [cited by applicant]
US 7864268B2 · Egi et al. · 2011 [cited by applicant]
US 7868326B2 · Sano et al. · 2011 [cited by applicant]
US 7883934B2 · Kaji et al. · 2011 [cited by applicant]
US 7910490B2 · Akimoto et al. · 2011 [cited by applicant]
US 7923287B2 · Lee et al. · 2011 [cited by applicant]
US 7932521B2 · Akimoto et al. · 2011 [cited by applicant]
US 7956957B2 · Ishitani et al. · 2011 [cited by applicant]
US 7964871B2 · Iwasaki · 2011 [cited by applicant]
US 7982215B2 · Inoue et al. · 2011 [cited by applicant]
US 8030195B2 · Inoue et al. · 2011 [cited by applicant]
US 8045072B2 · Ahn · 2011 [cited by applicant]
US 8134545B2 · Takatori et al. · 2012 [cited by applicant]
US 8149346B2 · Kimura · 2012 [cited by applicant]
US 8153339B2 · Kim et al. · 2012 [cited by applicant]
US 8168974B2 · Sano et al. · 2012 [cited by applicant]
US 8212953B2 · Hosoya · 2012 [cited by applicant]
US 8274077B2 · Akimoto et al. · 2012 [cited by applicant]
US 8344379B2 · Fujikawa et al. · 2013 [cited by applicant]
US 8372701B2 · Lee et al. · 2013 [cited by applicant]
US 8405800B2 · Ishitani et al. · 2013 [cited by applicant]
US 8436842B2 · Takatori et al. · 2013 [cited by applicant]
US 8466463B2 · Akimoto et al. · 2013 [cited by applicant]
US 8487436B2 · Isa et al. · 2013 [cited by applicant]
US 8576347B2 · Kimura · 2013 [cited by applicant]
US 8610846B2 · Ishitani et al. · 2013 [cited by applicant]
US 8629069B2 · Akimoto et al. · 2014 [cited by applicant]
US 8633872B2 · Osame · 2014 [cited by applicant]
US 8637869B2 · Lee et al. · 2014 [cited by applicant]
US 8648346B2 · Isa et al. · 2014 [cited by applicant]
US 8669550B2 · Akimoto et al. · 2014 [cited by applicant]
US 8670091B2 · Egi et al. · 2014 [cited by applicant]
US 8790959B2 · Akimoto et al. · 2014 [cited by applicant]
US 8796069B2 · Akimoto et al. · 2014 [cited by applicant]
US 8804060B2 · Sakakura et al. · 2014 [cited by applicant]
US 8885114B2 · Kimura · 2014 [cited by applicant]
US 9099562B2 · Akimoto et al. · 2015 [cited by applicant]
US 9164313B2 · Egi et al. · 2015 [cited by applicant]
US 9269826B2 · Hosono et al. · 2016 [cited by applicant]
US 9356152B2 · Isa et al. · 2016 [cited by applicant]
US 9576986B2 · Sakakura et al. · 2017 [cited by applicant]
US 9773818B2 · Kimura · 2017 [cited by applicant]
US 9947803B2 · Hosono et al. · 2018 [cited by applicant]
US 9991290B2 · Sakakura et al. · 2018 [cited by applicant]
US 10032930B2 · Hosono et al. · 2018 [cited by applicant]
US 10032931B2 · Hosono et al. · 2018 [cited by applicant]
US 10304962B2 · Akimoto et al. · 2019 [cited by applicant]
US 10847547B2 · Kimura · 2020 [cited by applicant]
US 11296124B2 · Kimura · 2022 [cited by applicant]
US 20010046027A1 · Tai et al. · 2001 [cited by applicant]
US 20020056838A1 · Ogawa · 2002 [cited by applicant]
US 20020131010A1 · Ozaki et al. · 2002 [cited by applicant]
US 20020132454A1 · Ohtsu et al. · 2002 [cited by applicant]
US 20030007107A1 · Chae et al. · 2003 [cited by applicant]
US 20030189401A1 · Kido et al. · 2003 [cited by applicant]
US 20030203627A1 · Pang · 2003 [cited by applicant]
US 20030218222A1 · Wager, III et al. · 2003 [cited by applicant]
US 20040038446A1 · Takeda et al. · 2004 [cited by applicant]
US 20040127038A1 · Carcia et al. · 2004 [cited by applicant]
US 20040155846A1 · Hoffman et al. · 2004 [cited by applicant]
US 20040241925A1 · Jinno. et al. · 2004 [cited by applicant]
US 20050017302A1 · Hoffman · 2005 [cited by applicant]
US 20050173734A1 · Yoshioka et al. · 2005 [cited by applicant]
US 20050199959A1 · Chiang et al. · 2005 [cited by applicant]
US 20050199960A1 · Hoffman et al. · 2005 [cited by applicant]
US 20050263769A1 · Chul Ahn · 2005 [cited by applicant]
US 20050275038A1 · Shih et al. · 2005 [cited by applicant]
US 20060035452A1 · Carcia et al. · 2006 [cited by applicant]
US 20060043377A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060079037A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060091793A1 · Baude et al. · 2006 [cited by applicant]
US 20060102907A1 · Lee · 2006 [cited by examiner]
US 20060108529A1 · Saito et al. · 2006 [cited by applicant]
US 20060108636A1 · Sano et al. · 2006 [cited by applicant]
US 20060110867A1 · Yabuta et al. · 2006 [cited by applicant]
US 20060113536A1 · Kumomi et al. · 2006 [cited by applicant]
US 20060113539A1 · Sano et al. · 2006 [cited by applicant]
US 20060113549A1 · Den et al. · 2006 [cited by applicant]
US 20060113565A1 · Abe et al. · 2006 [cited by applicant]
US 20060169973A1 · Isa et al. · 2006 [cited by applicant]
US 20060170111A1 · Isa et al. · 2006 [cited by applicant]
US 20060197092A1 · Hoffman et al. · 2006 [cited by applicant]
US 20060208977A1 · Kimura · 2006 [cited by applicant]
US 20060228974A1 · Thelss et al. · 2006 [cited by applicant]
US 20060231882A1 · Kim et al. · 2006 [cited by applicant]
US 20060238135A1 · Kimura · 2006 [cited by applicant]
US 20060244107A1 · Sugihara et al. · 2006 [cited by applicant]
US 20060284171A1 · Levy et al. · 2006 [cited by applicant]
US 20060284172A1 · Ishii · 2006 [cited by applicant]
US 20060292777A1 · Dunbar · 2006 [cited by applicant]
US 20070024187A1 · Shin et al. · 2007 [cited by applicant]
US 20070046191A1 · Saito · 2007 [cited by applicant]
US 20070052025A1 · Yabuta · 2007 [cited by applicant]
US 20070054507A1 · Kaji et al. · 2007 [cited by applicant]
US 20070057261A1 · Jeong et al. · 2007 [cited by applicant]
US 20070072439A1 · Akimoto et al. · 2007 [cited by applicant]
US 20070082443A1 · Yamazaki et al. · 2007 [cited by applicant]
US 20070090365A1 · Hayashi et al. · 2007 [cited by applicant]
US 20070108446A1 · Akimoto · 2007 [cited by applicant]
US 20070111144A1 · Fujikawa et al. · 2007 [cited by applicant]
US 20070139571A1 · Kimura · 2007 [cited by applicant]
US 20070152217A1 · Lai et al. · 2007 [cited by applicant]
US 20070172591A1 · Seo et al. · 2007 [cited by applicant]
US 20070182885A1 · Egi et al. · 2007 [cited by applicant]
US 20070187678A1 · Hirao et al. · 2007 [cited by applicant]
US 20070187760A1 · Furuta et al. · 2007 [cited by applicant]
US 20070194379A1 · Hosono et al. · 2007 [cited by applicant]
US 20070252152A1 · Sato et al. · 2007 [cited by applicant]
US 20070252928A1 · Ito et al. · 2007 [cited by applicant]
US 20070272922A1 · Kim et al. · 2007 [cited by applicant]
US 20070287296A1 · Chang · 2007 [cited by applicant]
US 20080001154A1 · Lee · 2008 [cited by applicant]
US 20080006877A1 · Mardilovich et al. · 2008 [cited by applicant]
US 20080038882A1 · Takechi et al. · 2008 [cited by applicant]
US 20080038929A1 · Chang · 2008 [cited by applicant]
US 20080050595A1 · Nakagawara et al. · 2008 [cited by applicant]
US 20080068364A1 · Park et al. · 2008 [cited by applicant]
US 20080073653A1 · Iwasaki · 2008 [cited by applicant]
US 20080083950A1 · Pan et al. · 2008 [cited by applicant]
US 20080106191A1 · Kawase · 2008 [cited by applicant]
US 20080128689A1 · Lee et al. · 2008 [cited by applicant]
US 20080129195A1 · Ishizaki et al. · 2008 [cited by applicant]
US 20080142797A1 · Lee et al. · 2008 [cited by applicant]
US 20080166834A1 · Kim. et al. · 2008 [cited by applicant]
US 20080182358A1 · Cowdery-Corvan et al. · 2008 [cited by applicant]
US 20080224133A1 · Park et al. · 2008 [cited by applicant]
US 20080254569A1 · Hoffman et al. · 2008 [cited by applicant]
US 20080258139A1 · Ito et al. · 2008 [cited by applicant]
US 20080258140A1 · Lee et al. · 2008 [cited by applicant]
US 20080258141A1 · Park et al. · 2008 [cited by applicant]
US 20080258143A1 · Kim et al. · 2008 [cited by applicant]
US 20080296568A1 · Ryu et al. · 2008 [cited by applicant]
US 20090057663A1 · Kim et al. · 2009 [cited by applicant]
US 20090068773A1 · Lai et al. · 2009 [cited by applicant]
US 20090073325A1 · Kuwabara et al. · 2009 [cited by applicant]
US 20090114910A1 · Chang · 2009 [cited by applicant]
US 20090134399A1 · Sakakura et al. · 2009 [cited by applicant]
US 20090152506A1 · Umeda et al. · 2009 [cited by applicant]
US 20090152541A1 · Maekawa et al. · 2009 [cited by applicant]
US 20090160741A1 · Inoue et al. · 2009 [cited by applicant]
US 20090189153A1 · Iwasaki et al. · 2009 [cited by applicant]
US 20090278122A1 · Hosono et al. · 2009 [cited by applicant]
US 20090280600A1 · Hosono et al. · 2009 [cited by applicant]
US 20100065844A1 · Tokunaga · 2010 [cited by applicant]
US 20100092800A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100109002A1 · Itagaki et al. · 2010 [cited by applicant]
US 20100117999A1 · Matsunaga et al. · 2010 [cited by applicant]
US 20100177269A1 · Kimura · 2010 [cited by applicant]
US 20100224878A1 · Kimura · 2010 [cited by applicant]
US 20110114947A1 · Iwasaki · 2011 [cited by applicant]
US 20120154456A1 · Kimura et al. · 2012 [cited by applicant]
US 20120170784A1 · Kimura · 2012 [cited by applicant]
US 20120270348A1 · Hosoya · 2012 [cited by applicant]
US 20140070211A1 · Iwasaki et al. · 2014 [cited by applicant]
US 20140167054A1 · Lee et al. · 2014 [cited by applicant]
US 20180323313A1 · Hosono et al. · 2018 [cited by applicant]
US 20220310663A1 · Kimura · 2022 [cited by applicant]
CN 001702530A · 2005 [cited by applicant]
CN 1725501A · 2006 [cited by examiner]
CN 001941299A · 2007 [cited by applicant]
CN 1959992A · 2007 [cited by examiner]
CN 101034218A · 2007 [cited by applicant]
CN 101097388A · 2008 [cited by applicant]
EP 1229379A · 2002 [cited by applicant]
EP 1737044A · 2006 [cited by applicant]
EP 1777689A · 2007 [cited by applicant]
EP 1788633A · 2007 [cited by applicant]
EP 1801640A · 2007 [cited by applicant]
EP 1816508A · 2007 [cited by applicant]
EP 1826605A · 2007 [cited by applicant]
EP 1826606A · 2007 [cited by applicant]
EP 1832915A · 2007 [cited by applicant]
EP 1850386A · 2007 [cited by applicant]
EP 1879233A · 2008 [cited by applicant]
EP 1884821A · 2008 [cited by applicant]
EP 1933293A · 2008 [cited by applicant]
EP 2006824A · 2008 [cited by applicant]
EP 2149910A · 2010 [cited by applicant]
EP 2149911A · 2010 [cited by applicant]
EP 2226847A · 2010 [cited by applicant]
EP 2246894A · 2010 [cited by applicant]
EP 2413366A · 2012 [cited by applicant]
JP 60198861A · 1985 [cited by applicant]
JP 63210022A · 1988 [cited by applicant]
JP 63210023A · 1988 [cited by applicant]
JP 63210024A · 1988 [cited by applicant]
JP 63215519A · 1988 [cited by applicant]
JP 63239117A · 1988 [cited by applicant]
JP 63265818A · 1988 [cited by applicant]
JP 02072329A · 1990 [cited by applicant]
JP 02184824A · 1990 [cited by applicant]
JP 04104227A · 1992 [cited by applicant]
JP 05040271A · 1993 [cited by applicant]
JP 05251705A · 1993 [cited by applicant]
JP 05323375A · 1993 [cited by applicant]
JP 07199227A · 1995 [cited by applicant]
JP 08029809A · 1996 [cited by applicant]
JP 07140489A · 1996 [cited by applicant]
JP 08264794A · 1996 [cited by applicant]
JP 10048668A · 1998 [cited by applicant]
JP 11505377 · 1999 [cited by applicant]
JP 2000044236A · 2000 [cited by applicant]
JP 2000101091A · 2000 [cited by applicant]
JP 2000150900A · 2000 [cited by applicant]
JP 2001332738A · 2001 [cited by applicant]
JP 2001343659A · 2001 [cited by applicant]
JP 2002076356A · 2002 [cited by applicant]
JP 2002107762A · 2002 [cited by applicant]
JP 2002289859A · 2002 [cited by applicant]
JP 2002303876A · 2002 [cited by applicant]
JP 2002341373A · 2002 [cited by applicant]
JP 2003037268A · 2003 [cited by applicant]
JP 2003086000A · 2003 [cited by applicant]
JP 2003086808A · 2003 [cited by applicant]
JP 2004047719A · 2004 [cited by applicant]
JP 2004103957A · 2004 [cited by applicant]
JP 2004273614A · 2004 [cited by applicant]
JP 2004273732A · 2004 [cited by applicant]
JP 2005338855A · 2005 [cited by applicant]
JP 2006173580A · 2006 [cited by applicant]
JP 2006242987A · 2006 [cited by applicant]
JP 2006245031A · 2006 [cited by applicant]
JP 2007073614A · 2007 [cited by applicant]
JP 2007073699A · 2007 [cited by applicant]
JP 2007073703A · 2007 [cited by applicant]
JP 2007081362A · 2007 [cited by applicant]
JP 2007101896A · 2007 [cited by applicant]
JP 2007123700A · 2007 [cited by applicant]
JP 2007133371A · 2007 [cited by applicant]
JP 2007142382A · 2007 [cited by applicant]
JP 2007173489A · 2007 [cited by applicant]
JP 2007199708A · 2007 [cited by applicant]
JP 2007266252A · 2007 [cited by applicant]
JP 2007286150A · 2007 [cited by applicant]
JP 2007294709A · 2007 [cited by applicant]
JP 2007298627A · 2007 [cited by applicant]
JP 2007299913A · 2007 [cited by applicant]
JP 2007333835A · 2007 [cited by applicant]
JP 2007334082A · 2007 [cited by applicant]
JP 2008022008A · 2008 [cited by applicant]
JP 2008107794A · 2008 [cited by applicant]
JP 2008135520A · 2008 [cited by applicant]
JP 2009099887A · 2009 [cited by applicant]
KR 20050112644A · 2005 [cited by applicant]
KR 20050122465A · 2005 [cited by applicant]
KR 20060053505A · 2006 [cited by applicant]
KR 20060133981A · 2006 [cited by applicant]
KR 20070076149A · 2007 [cited by applicant]
TW 527574 · 2003 [cited by applicant]
TW 200534367 · 2005 [cited by applicant]
TW 200534488 · 2005 [cited by applicant]
TW 200619830 · 2006 [cited by applicant]
TW 200629571 · 2006 [cited by applicant]
TW 200640014 · 2006 [cited by applicant]
TW 200725901 · 2007 [cited by applicant]
TW 200726310 · 2007 [cited by applicant]
TW 200727331 · 2007 [cited by applicant]
TW 200729506 · 2007 [cited by applicant]
TW 200731183 · 2007 [cited by applicant]
TW 200731465 · 2007 [cited by applicant]
TW 200734769 · 2007 [cited by applicant]
TW 200739197 · 2007 [cited by applicant]
TW 200739226 · 2007 [cited by applicant]
TW 200745674 · 2007 [cited by applicant]
TW 200745675 · 2007 [cited by applicant]
TW 200745676 · 2007 [cited by applicant]
TW 200807124 · 2008 [cited by applicant]
WO WO2004008539 · 2004 [cited by applicant]
WO WO2004114391 · 2004 [cited by applicant]
WO WO2005048353 · 2005 [cited by applicant]
WO WO2005093847 · 2005 [cited by applicant]
WO WO2006051995 · 2006 [cited by applicant]
WO WO2006093028 · 2006 [cited by applicant]
WO WO2006093029 · 2006 [cited by applicant]
WO WO2007032294 · 2007 [cited by applicant]
WO WO2007040194 · 2007 [cited by applicant]
WO WO2007088954 · 2007 [cited by applicant]
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492. [cited by applicant]
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272. [cited by applicant]
Fortunato.E et al., “Wide-Bandgap High-Mobility ZNO Thin-Film Transistors Produced at Room Temperature”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 27, 2004, vol. 85, No. 13, pp. 2541-2543. [cited by applicant]
Dembo.H et al., “RFCPUS on Glass and Plastic Substrates Fabricated by TFT Transfer Technology”, IEDM 05: Technical Digest of International Electron Devices Meeting, Dec. 5, 2005, pp. 1067-1069. [cited by applicant]
Ikeda.T et al., “Full-Functional System Liquid Crystal Display Using CG-Silicon Technology”, SID Digest '04 : SID International Symposium Digest of Technical Papers, 2004, vol. 35, pp. 860-863. [cited by applicant]
Park.J et al., “Improvements in the Device Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Ar Plasma Treatment”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 26, 2007, vol. 90, No. … [cited by applicant]
Takahashi.M et al., “Theoretical Analysis of IGZO Transparent Amorphous Oxide Semiconductor”, IDW '08 : Proceedings of the 15th International Display Workshops, Dec. 3, 2008, pp. 1637-1640. [cited by applicant]
Hayashi.R et al., “42.1: Invited Paper: Improved Amorphous In—Ga—Zn—O TFTs”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 621-624. [cited by applicant]
Prins.M et al., “A Ferroelectric Transparent Thin-Film Transistor”, Appl. Phys. Lett. (Applied Physics Letters) , Jun. 17, 1996, vol. 68, No. 25, pp. 3650-3652. [cited by applicant]
Nakamura.M et al., “The phase relations in the In2O3—Ga2ZnO4—ZnO system at 1350° C”, Journal of Solid State Chemistry, Aug. 1, 1991, vol. 93, No. 2, pp. 298-315. [cited by applicant]
Kimizuka.N et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3—ZnGa2O4—ZnO System”, Journal of Solid State Chem… [cited by applicant]
Masuda.S et al., “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties”, J. Appl. Phys. (Journal of Applied Physics) , Feb. 1, 2003, vol. 93, No. 3, pp. 1624-1630. [cited by applicant]
Asakuma.N et al., “Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation With Ultraviolet Lamp”, Journal of Sol-Gel Science and Technology, 2003, vol. 26, pp. 181-184. [cited by applicant]
Osada.T et al., “15.2: Development of Driver-Integrated Panel using Amorphous In-Ga-Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 184-187. [cited by applicant]
Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films”, Appl. Phys. Lett. (Applied Physics Letters) , Sep. 13, 200… [cited by applicant]
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355. [cited by applicant]
Son.K et al., “42.4L: Late-News Paper: 4 Inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous Gizo (Ga2O3—In2O3—ZnO) TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20… [cited by applicant]
Lee.J et al., “World's Largest (15-Inch) XGA AMLCD Panel Using IGZO Oxide TFT”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 625-628. [cited by applicant]
Nowatari.H et al., “60.2: Intermediate Connector With Suppressed Voltage Loss for White Tandem OLEDs”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, vol. 40, pp. 899-902. [cited by applicant]
Kanno.H et al., “White Stacked Electrophosphorecent Organic Light-Emitting Devices Employing MOO3 as a Charge-Generation Layer”, Adv. Mater. (Advanced Materials), 2006, vol. 18, No. 3, pp. 339-342. [cited by applicant]
Tsuda.K et al., “Ultra Low Power Consumption Technologies for Mobile TFT-LCDs ”, IDW '02 : Proceedings of the 9th International Display Workshops, Dec. 4, 2002, pp. 295-298. [cited by applicant]
Van de Walle.C, “Hydrogen as a Cause of Doping in Zinc Oxide”, Phys. Rev. Lett. (Physical Review Letters), Jul. 31, 2000, vol. 85, No. 5, pp. 1012-1015. [cited by applicant]
Fung.T et al., “2-D Numerical Simulation of High Performance Amorphous In—Ga—Zn—O TFTs for Flat Panel Displays”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 251-252, The Japan Society of Applied Physics. [cited by applicant]
Jeong.J et al., “3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, N… [cited by applicant]
Park.J et al., “High performance amorphous oxide thin film transistors with self-aligned top-gate structure”, IEDM 09: Technical Digest of International Electron Devices Meeting, Dec. 7, 2009, pp. 191-194. [cited by applicant]
Kurokawa.Y et al., “UHF RFCPUS on Flexible and Glass Substrates for Secure RFID Systems”, Journal of Solid-State Circuits , 2008, vol. 43, No. 1, pp. 292-299. [cited by applicant]
Ohara.H et al., “Amorphous In-Ga-Zn-Oxide TFTs with Suppressed Variation for 4.0 inch QVGA AMOLED Display”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 227-230, The Japan Society of Applied Physics. [cited by applicant]
Coates.D et al., “Optical Studies of the Amorphous Liquid-Cholesteric Liquid Crystal Transition: the “Blue Phase””, Physics Letters, Sep. 10, 1973, vol. 45A, No. 2, pp. 115-116. [cited by applicant]
Cho.D et al., “21.2:AL and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back Plane”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 280-283. [cited by applicant]
Lee.M et al., “15.4:Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 191-193. [cited by applicant]
Jin.D et al., “65.2: Distinguished Paper: World-Largest (6.5″) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties”, SID Digest '09 : SID International Symposium Digest of Technica… [cited by applicant]
Sakata.J et al., “Development of 4.0-In. AMOLED Display With Driver Circuit Using Amorphous In-Ga-Zn-Oxide TFTs”, IDW '09 : Proceedings of the 16th International Display Workshops, 2009, pp. 689-692. [cited by applicant]
Park.J et al., “Amorphous Indium-Gallium-Zinc Oxide TFTs and Their Application for Large Size AMOLED”, AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 275-278. [cited by applicant]
Park.S et al., “Challenge to Future Displays: Transparent AM-OLED Driven By Peald Grown ZNO TFT”, IMID '07 Digest, 2007, pp. 1249-1252. [cited by applicant]
Godo.H et al., “Temperature Dependence of Characteristics and Electronic Structure for Amorphous In-Ga-Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 41-44. [cited by applicant]
Osada.T et al., “Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT”, AM-FPD '09 Digest of Technical Papers, Jul. 1, 2009, pp. 33-36. [cited by applicant]
Hirao.T et al., “Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZNO TFTs) for AMLCDS”, J. Soc. Inf. Display (Journal of the Society for Information Display), 2007, vol. 15, No. 1, pp. 17-22. [cited by applicant]
Hosono.H, “68.3:Invited Paper:Transparent Amorphous Oxide Semiconductors for High Performance TFT”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1830-1833. [cited by applicant]
Godo.H et al., “P-9:Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In-Ga-Zn-Oxide TFT”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 1110-1112. [cited by applicant]
Ohara.H et al., “21.3:4.0 In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs With a Novel Passivation Layer”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 284-287. [cited by applicant]
Miyasaka.M, “Suftla Flexible Microelectronics on Their Way to Business”, SID Digest '07 : SID International Symposium Digest of Technical Papers, 2007, vol. 38, pp. 1673-1676. [cited by applicant]
Chern.H et al., “an Analytical Model for the Above-Threshold Characteristics of Polysilicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Jul. 1, 1995, vol. 42, No. 7, pp. 1240-1246. [cited by applicant]
Kikuchi.H et al., “39.1:Invited Paper:Optically Isotropic Nano-Structured Liquid Crystal Composites for Display Applications”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 5… [cited by applicant]
Asaoka.Y et al., “29.1:Polarizer-Free Reflective LCD Combined With Ultra Low-Power Driving Technology”, SID Digest '09 : SID International Symposium Digest of Technical Papers, May 31, 2009, pp. 395-398. [cited by applicant]
Lee.H et al., “Current Status of, Challenges to, and Perspective View of AM-OLED”, IDW '06 : Proceedings of the 13th International Display Workshops, Dec. 7, 2006, pp. 663-666. [cited by applicant]
Kikuchi.H et al., “62.2:Invited Paper:Fast Electro-Optical Switching in Polymer-Stabilized Liquid Crystalline Blue Phases for Display Application”, SID Digest '07 : SID International Symposium Digest of Technical Papers… [cited by applicant]
Nakamua.M, “Synthesis of Homologous Compound with New Long-Period Structure”, Nirim Newsletter, Mar. 1, 1995, vol. 150, pp. 1-4. [cited by applicant]
Kikuchi.H et al., “Polymer-Stabilized Liquid Crystal Blue Phases”, Nature Materials, Sep. 2, 2002, vol. 1, pp. 64-68. [cited by applicant]
Kimikuka.N et al., “Spinel, YBFE204, and YB2FE307 Types of Structures for Compounds in the IN2O3 and SC2O3—A2O3—BO Systems [A; Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures Over 1000° C”, Journal of Solid… [cited by applicant]
Kitzerow.H et al., “Observation of Blue Phases in Chiral Networks”, Liquid Crystals, 1993, vol. 14, No. 3, pp. 911-916. [cited by applicant]
Costello.M et al., “Electron Microscopy of a Cholesteric Liquid Crystal and Its Blue Phase”, Phys. Rev. A (Physical Review. A), May 1, 1984, vol. 29, No. 5, pp. 2957-2959. [cited by applicant]
Meiboom.S et al., “Theory of the Blue Phase of Cholesteric Liquid Crystals”, Phys. Rev. Lett. (Physical Review Letters), May 4, 1981, vol. 46, No. 18, pp. 1216-1219. [cited by applicant]
Park.S et al., “42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 20… [cited by applicant]
Orita.M et al., “Mechanism of Electrical Conductivity of Transparent InGaZnO4”, Phys. Rev. B (Physical Review. B), Jan. 15, 2000, vol. 61, No. 3, pp. 1811-1816. [cited by applicant]
Nomura.K et al., “Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors”, Jpn. J. Appl. Phys. (Japanese Journal of Applied Physics) , 2006, vol. 45, No. 5B, pp. 4303-4308. [cited by applicant]
Janotti.A et al., “Native Point Defects in ZnO”, Phys. Rev. B (Physical Review. B), Oct. 4, 2007, vol. 76, No. 16, pp. 165202-1-165202-22. [cited by applicant]
Park.J et al., “Electronic Transport Properties of Amorphous Indium-Gallium-Zinc Oxide Semiconductor Upon Exposure to Water”, Appl. Phys. Lett. (Applied Physics Letters) , 2008, vol. 92, pp. 072104-1-072104-3. [cited by applicant]
Hsieh.H et al., “P-29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States”, SID Digest '08 : SID International Symposium Digest of Technical Papers, May 20, 2008, vol. 39, pp. 1… [cited by applicant]