Thin film transistor array panel including layered line structure and method for manufacturing the same
The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
1. A thin film transistor array panel comprising:
an insulating substrate;
a gate line disposed on the insulating substrate;
a gate insulating layer which is in contact with the gate line;
an oxide semiconductor which is in contact with the gate insulating layer;
a drain electrode; and
a data line having a source electrode disposed over the gate insulating layer, the drain electrode being adjacent to the source electrode and spaced apart therefrom;
wherein at least one of the gate line, the data line, and the drain electrode comprises a first layer comprising a conductive oxide, a second layer comprising copper (Cu) and a third layer comprising a conductive oxide.
2. The thin film transistor array panel of claim 1 , wherein the first layer and the third layer each comprise at least one of ITO, ITON, IZO, and IZON.
3. The thin film transistor array panel of claim 2 , wherein the first layer and the third layer are in an amorphous state.
4. The thin film transistor array panel of claim 1 , wherein the second layer is thicker than both the first layer and the third layer.
5. The thin film transistor array panel of claim 1 , wherein the data line and the drain electrode each comprise the first layer, the second layer and the third layer.
6. The thin film transistor array panel of claim 1 , further comprising:
a passivation layer which is in contact with the drain electrode and the data line,
wherein the oxide semiconductor has an exposed portion between the source electrode and the drain electrode, and the exposed portion is in contact with the passivation layer.
7. The thin film transistor array panel of claim 1 , further comprising an etch stopper disposed on the oxide semiconductor.
8. The thin film transistor array panel of claim 7 , further comprising:
a passivation layer which is in contact with the drain electrode and the data line,
wherein the etch stopper has an exposed portion between the source electrode and the drain electrode, and the exposed portion is in contact with the passivation layer.