IP Library Assignment 031874/0054
Patent Assignment
Reel/Frame 031874/0054

Assignment of Assignor's Interest

Recorded: 2014-01-02 Pages: 3
Assignor
TAKAHATA, MASAHIRO
Executed: 2013-12-19
Assignee
JX NIPPON MINING & METALS CORPORATION
6-3, OTEMACHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8164, JAPAN
Covered Property (1)
High-Purity Yttrium, Process of Producing High-Purity Yttrium, High-Purity Yttrium Sputtering Target, Metal Gate Film Deposited with High-Purity Yttrium Sputtering Target, and Semiconductor Element and Device Equipped with the Metal Gate Film
Application: 14/130,523 →
Publication: US 2014/0140884
Related Assignments (2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Address Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057453/0937 →
Change of Address Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →