High-purity yttrium, process of producing high-purity yttrium, high-purity yttrium sputtering target, metal gate film deposited with high-purity yttrium sputtering target, and semiconductor element and device equipped with the metal gate film
View Patent ↗Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.
1. A high-purity yttrium in a form of a cast ingot having a purity of 5N or higher excluding rare earth elements and gas components and containing as impurities Al, Fe, and Cu each in an amount of 1 wt ppm or less, U and Th each in an amount of 50 wt ppb or less, Al, Fe, Cu, W, Mo, Ta, U, and Th in a total amount of 10 wt ppm or less, Mg in an amount less than 0.05 wt ppm, Ca in an amount of less than 0.1 wt ppm, and carbon in an amount of 150 wt ppm or less.
2. The high-purity yttrium according to claim 1 , having a radiation dose or α-ray dose in an amount of less than 0.001 cph/cm 2 .
3. The high-purity yttrium according to claim 1 , wherein the target contains an amount of carbon.
4. The high-purity yttrium according to claim 3 , wherein the target contains 130 wtppm of carbon.
5. The high-purity yttrium according to claim 3 , wherein the target contains an amount of aluminum.
6. The high-purity yttrium according to claim 5 , wherein the target contains 0.18 wtppm of aluminum.
7. A method of producing a high-purity yttrium in a form of a cast ingot, the method comprising:
molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals;
desalting treatment, water washing, and drying of the yttrium crystals; and
electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu, 50 wt ppb or less of each of U and Th, 10 wt ppm or less in total of Al, Fe, Cu, W, Mo, Ta, U, and Th, less than 0.05 wt ppm of Mg, less than 0.1 wt ppm of Ca, and 150 wt ppm or less of carbon.
8. The method of producing high-purity yttrium according to claim 7 , wherein an electrolytic bath composed of potassium chloride (KCl), lithium chloride (LiCl), and yttrium chloride (YCl 3 ) is used as a molten salt electrolytic bath.
9. The method of producing high-purity yttrium according to claim 8 , wherein the molten salt electrolysis is performed using an anode made of Ta or ferritic stainless steel (SUS).
10. The method of producing high-purity yttrium according to claim 9 , wherein the desalting treatment is performed by separating a metal and a salt from each other by means of a vapor pressure differential by vacuum heating in a heating furnace at a temperature of 1000° C. or less, or by dissolving a salt with an acid.
11. The method of producing high-purity yttrium according to claim 7 , wherein the molten salt electrolysis is performed using an anode made of Ta or ferritic stainless steel (SUS).
12. The method of producing high-purity yttrium according to claim 7 , wherein the desalting treatment is performed by separating a metal and a salt from each other by means of a vapor pressure differential by vacuum heating in a heating furnace at a temperature of 1000° C. or less, or by dissolving a salt with an acid.
13. A high-purity yttrium sputtering target formed form a cast ingot having a purity of 5N or higher excluding rare earth elements and gas components and containing as impurities Al, Fe, and Cu each in an amount of 1 wt ppm or less, U and Th each in an amount of 50 wt ppb or less, Al, Fe, Cu, W, Mo, Ta, U, and Th in a total amount of 10 wt ppm or less, Mg in an amount less than 0.05 wt ppm, Ca in an amount of less than 0.1 wt ppm, and carbon in an amount of 150 wt ppm or less.
14. The high-purity yttrium sputtering target according to claim 13 , having a radiation dose or α-ray dose in an amount of less than 0.001 cph/cm 2 .
15. A metal gate film formed using the high-purity yttrium sputtering target according to claim 13 .
16. A semiconductor element and a device each comprising the metal gate film according to claim 15 .
17. The high-purity yttrium sputtering target according to claim 13 , wherein the target contains an amount of carbon.
18. The high-purity yttrium sputtering target according to claim 17 , wherein the target contains 130 wtppm of carbon.
19. The high-purity yttrium sputtering target according to claim 17 , wherein the target contains an amount of aluminum.
20. The high-purity yttrium sputtering target according to claim 19 , wherein the target contains 0.18 wtppm of aluminum.