Patent Assignment
Reel/Frame 033479/0310
Assignment of Assignor's Interest
Recorded: 2014-08-06
Pages: 8
Assignors
HEBERT, FRANCOIS
Executed: 2014-07-17
SUN, I-SHAN
Executed: 2014-07-22
KIM, YOUNG BAE
Executed: 2014-07-16
KIM, YOUNG JU
Executed: 2014-07-16
KIM, KWANG IL
Executed: 2014-07-16
OH, IN TAEK
Executed: 2014-07-16
MOON, JIN WOO
Executed: 2014-07-16
Assignee
MAGNACHIP SEMICONDUCTOR, LTD.
215, DAESIN-RO, HEUNGDEOK-GU, CHEONGJU-SI, CHUNGCHEONGBOK-DO 361-725, CHEONGJU-SI, KOREA, REPUBLIC OF
Covered Property
(1)
Method of Fabricating a Ldmos Device Having a First Well Depth Less Than a Second Well Depth
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.