Patent Assignment
Reel/Frame 034080/0312
Assignment of Assignor's Interest
Recorded: 2014-10-28
Pages: 8
Assignor
UNILOC LUXEMBOURG S.A.
Executed: 2014-10-28
Assignee
THUNDERBIRD TECHNOLOGIES, INC.
5540 CENTERVIEW DRIVE, SUITE 200, RALEIGH, NORTH CAROLINA, 27606
Covered Properties
(17)
Fermi Threshold Field Effect Transistor with Reduced Gate and Diffusion Capacitance
Patent:
5,194,923 →
Application:
07/826,939 →
Fermi Threshold Field Effect Transistor with Reduced Gate and Diffusion Capacitance
Patent:
5,369,295 →
Application:
07/977,689 →
High Current Fermi Threshold Field Effect Transistor
Patent:
5,374,836 →
Application:
08/037,636 →
Bounded Tub Fermi Threshold Field Effect Transistor
Patent:
5,367,186 →
Application:
08/050,852 →
Field Effect Transistor Having Polycrystalline Silicon Gate Junction
Patent:
5,371,396 →
Application:
08/087,509 →
Method of Fabricating Field Effect Transistor Having Polycrystalline Silicon Gate Junction
Patent:
5,438,007 →
Application:
08/127,767 →
High Saturation Current, Low Leakage Current Fermi Threshold Field Effect Transistor
Patent:
5,440,160 →
Application:
08/177,847 →
Contoured-Tub Fermi-Threshold Field Effect Transistor and Method of Forming Same
Patent:
5,543,654 →
Application:
08/351,643 →
Fermi Threshold Field Effect Transistor Including Doping Gradient Regions
Patent:
5,525,822 →
Application:
08/431,455 →
Short Channel Fermi-Threshold Field Effect Transistors
Patent:
5,814,869 →
Application:
08/505,085 →
Short Channel Fermi-Threshold Field Effect Transistors Including Drain Field Termination Region and Methods of Fabricating Same
Patent:
5,698,884 →
Application:
08/597,711 →
Fermi-Threshold Field Effect Transistors Including Source/Drain Pocket Implants and Methods of Fabricating Same
Patent:
5,786,620 →
Application:
08/613,110 →
Methods of Fbricating Short Channel Fermi-Threshold Field Effect Transistors Including Drain Field Termination Region
Patent:
5,885,876 →
Application:
08/902,150 →
Trench Gate Fermi-Threshold Field Effect Transistors
Patent:
6,555,872 →
Application:
09/718,816 →
Strained silicon, gate engineered Fermi-FETs
Application:
11/295,105 →
Publication:
US 2006/0138548
Methods of Fabricating Field Effect Transistors Including Titanium Nitride Gates Over Partially Nitrided Oxide and Devices So Fabricated
Application:
12/617,938 →
Publication:
US 2010/0123206
Methods of Fabricating Field Effect Transistors Including Titanium Nitride Gates Over Partially Nitrided Oxide and Devices So Fabricated
Application:
13/269,814 →
Publication:
US 2012/0264283
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.