IP Library Assignment 036868/0530
Patent Assignment
Reel/Frame 036868/0530

Assignment of Assignor's Interest

Recorded: 2015-10-23 Pages: 7
Assignors
SEL, JONGSUN
Executed: 2015-10-21
PARK, CHAN
Executed: 2015-10-21
SUYAMA, ATSUSHI
Executed: 2015-10-21
YU, FRANK
Executed: 2015-10-21
OGAWA, HIROYUKI
Executed: 2015-10-22
HONMA, RYOICHI
Executed: 2015-10-23
YAMAGUCHI, KENSUKE
Executed: 2015-10-23
IUCHI, HIROAKI
Executed: 2015-10-22
TAKEGUCHI, NAOKI
Executed: 2015-10-23
PHAM, TUAN
Executed: 2015-10-22
SAKAKIBARA, KIYOHIKO
Executed: 2015-10-22
CHEN, JIAO
Executed: 2015-10-22
Assignee
SANDISK TECHNOLOGIES INC.
TWO LEGACY TOWN CENTER, 6900 NORTH DALLAS PARKWAY, PLANO, TEXAS, 75024
Covered Properties (2)
Blocking Oxide in Memory Opening Integration Scheme for Three-Dimensional Memory Structure
Patent: 9,601,508 →
Application: 14/921,385 →
Publication: US 2016/0315095
Hybrid Block Oxide Process And Structure For 3D Stacked Memory Device
Application: 62/153,396 →
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038812/0954 →
Change of Name May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038809/0672 →