IP Library Assignment 039861/0850
Patent Assignment
Reel/Frame 039861/0850

Corrective Assignment to Correct the Receiving Party Previously Recorded at Reel: 024411 Frame: 0728. Assignor(S) Hereby Confirms the Change of Name.

Recorded: 2016-08-29 Pages: 15
Assignor
SILICON SEMICONDUCTOR CORPORATION
Executed: 2010-02-11
Assignee
SILICON PATENT HOLDINGS
WACHOVIA CAPITOL CENTER 150 FAYETTEVILLE STREET, SUITE 1400, C/O WILLIAM G. PAPPAS, ESQ., PARKER POE ADAMS & BERNSTEIN LLP, RALEIGH, NORTH CAROLINA, 27601
Covered Properties (10)
Mosfet Devices Having Linear Transfer Characteristics When Operating in Velocity Saturation Mode and Methods of Forming and Operating Same
Patent: 6,545,316 →
Application: 09/602,414 →
Power Devices Having Retrograded-Doped Transition Regions and Insulated Trench-Based Electrodes Therein
Patent: 6,781,194 →
Application: 09/833,132 →
Publication: US 2002/0175351
Vertical Power Devices Having Insulated Source Electrodes in Discontinuous Deep Trenches
Patent: 6,525,372 →
Application: 09/991,838 →
Publication: US 2002/0057610
Packaged Power Devices Having Vertical Power Mosfets Therein That Are Flip-Chip Mounted to Slotted Gate Electrode Strip Lines
Patent: 6,586,833 →
Application: 09/992,233 →
Publication: US 2002/0056872
Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes and Methods of Forming Same
Patent: 6,621,121 →
Application: 09/995,019 →
Publication: US 2002/0036319
Power Semiconductor Devices Having Laterally Extending Base Shielding Regions That Inhibit Base Reach-Through
Patent: 6,791,143 →
Application: 10/008,171 →
Publication: US 2002/0177277
Vertical Power Devices Having Retrograded-Doped Transition Regions Therein
Patent: 6,784,486 →
Application: 10/199,583 →
Publication: US 2002/0185679
Methods of Forming Vertical Mosfets Having Trench-Based Gate Electrodes Within Deeper Trench-Based Source Electrodes
Patent: 6,764,889 →
Application: 10/621,668 →
Publication: US 2004/0016963
Integrated Circuit Power Devices Having Junction Barrier Controlled Schottky Diodes Therein
Patent: 6,800,897 →
Application: 10/671,333 →
Publication: US 2004/0099905
Methods of Forming Power Semiconductor Devices Having Laterally Extending Base Shielding Regions
Patent: 7,041,559 →
Application: 10/936,757 →
Publication: US 2005/0032291
Related Assignments (6)
Other recorded transfers of the patents in this record — the chain of ownership.
Corrective Assignment to Correct the Receiving Party Previously Recorded at Reel: 024411 Frame: 0724. Assignor(S) Hereby Confirms the Change of Name . Aug 29, 2016
From: SILICON SEMICONDUCTOR CORPORATION
To: SILICON PATENT HOLDINGS
Reel/Frame 039861/0772 →
Patent Security Agreement Sep 19, 2016
From: SILICON PATENT HOLDINGS
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 040074/0772 →
Assignment of Assignor's Interest Jul 30, 2021
From: SILICON PATENT HOLDINGS
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 057034/0109 →
Release of Security Interest Oct 28, 2021
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: SILICON PATENT HOLDINGS
Reel/Frame 057952/0858 →
Security Interest Nov 12, 2021
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 058871/0799 →
Release of Security Interest in Patents Recorded at Reel 058871, Frame 0799 Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 065653/0001 →