IP Library Assignment 044497/0562
Patent Assignment
Reel/Frame 044497/0562

Assignment of Assignor's Interest

Recorded: 2017-12-28 Pages: 4
Assignors
HOSODA, NAOHIRO
Executed: 2017-12-21
SHIGEMURA, KEISUKE
Executed: 2017-12-21
ARIYOSHI, JUNICHI
Executed: 2017-12-21
KAJITANI, KAZUKI
Executed: 2017-12-21
FUKANO, YUJI
Executed: 2017-12-21
Assignee
SANDISK TECHNOLOGIES LLC
TWO LEGACY TOWN CENTER, 6900 NORTH DALLAS PARKWAY, SUITE 325, PLANO, TEXAS, 75024
Covered Property (1)
Three-Dimensional Memory Device Containing Multi-Threshold-Voltage Drain Select Gates and Method of Making the Same
Application: 15/850,073 →
Publication: US 2019/0198515
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →
Partial Release of Security Interests Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
Security Agreement Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →