Patent Assignment
Reel/Frame 046623/0030
Change of Name
Recorded: 2018-04-09
Pages: 4
Assignor
PHILIPS LUMILEDS LIGHTING COMPANY LLC
Executed: 2015-03-26
Assignee
LUMILEDS LLC
370 WEST TRIMBLE ROAD, SAN JOSE, CALIFORNIA, 95131
Covered Properties
(39)
Wafer Bonding of Light Emitting Diode Layers
Patent:
5,376,580 →
Application:
08/036,532 →
Moldable Nesting Frame for Light Emitting Diode Array
Patent:
5,519,596 →
Application:
08/442,724 →
Gas-Phase Etching and Regrowth Method for Group Iii-Nitride Crystals
Patent:
5,814,239 →
Application:
08/684,608 →
Reduction of Threading Dislocations by Amorphization and Recrystallization
Patent:
5,927,995 →
Application:
08/833,813 →
Low Voltage-Drop Electrical Contact for Gallium (Aluminum, Indium) Nitride
Patent:
6,100,586 →
Application:
08/862,461 →
Bi-Level Injection Molded Leadframe
Patent:
5,909,037 →
Application:
09/005,908 →
Buried Reflectors for Light Emitters in Epitaxial Material and Method for Producing Same
Patent:
6,046,465 →
Application:
09/062,368 →
Aigainp Light Emitting Devices with Thin Active Layers
Application:
09/122,568 →
Publication:
US 2001/0020703
Method for Relieving Stress in Gan Devices
Patent:
6,113,685 →
Application:
09/152,848 →
Inxalygazn Optical Emitters Fabricated via Substrate Removal
Application:
09/245,503 →
Publication:
US 2001/0042866
Buried Heterostructure for Lasers and Light Emitting Diodes
Patent:
6,327,288 →
Application:
09/263,654 →
Method for Detachng an Epitaxial Layer from One Substrate and Transferring It to Another Substrate
Patent:
6,177,359 →
Application:
09/326,337 →
Thin Multi-Well Active Layer Led with Controlled Oxygen Doping
Patent:
6,469,314 →
Application:
09/467,941 →
Semiconductor Light Emitting Device and Method
Forming low resistivity p-type gallium nitride
Application:
09/846,980 →
Publication:
US 2002/0157596
Forming Semiconductor Structures Including Activated Acceptors in Buried P-Type Iii-V Layers
Light Emitting Device Including an Electroconductive Layer
Light Emitting Diodes with Graded Composition Active Regions
Axial Led Source
Semiconductor light emitting device with fluoropolymer lens
Application:
10/170,882 →
Publication:
US 2003/0230977
Selective Filtering of Wavelength-Converted Semiconductor Light Emitting Devices
Light Emitting Devices with Enhanced Luminous Efficiency
Illumination system with LEDs
Application:
10/782,248 →
Publication:
US 2005/0179041
Photonic Crystal Light Emitting Device
Application:
10/804,810 →
Publication:
US 2005/0205883
Semiconductor Light Emitting Devices Including in-Plane Light Emitting Layers
Semiconductor light emitting device with flexible substrate
Application:
10/840,459 →
Publication:
US 2005/0247944
Light emitting device with transparent substrate having backside vias
Application:
10/867,606 →
Publication:
US 2005/0274970
Light source with light emitting array and collection optic
Application:
11/242,300 →
Publication:
US 2007/0076412
Array of Light Emitting Devices to Produce a White Light Source
Application:
11/297,287 →
Publication:
US 2006/0105482
P-Type Layer for a Iii-Nitride Light Emitting Device
Backlight Using High-Powered Corner LED
Application:
11/467,499 →
Publication:
US 2008/0049445
Multi-Grain Luminescent Ceramics for Light Emitting Devices
Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
Application:
11/615,601 →
Publication:
US 2008/0149946
Led with Phosphor Tile and Overmolded Phosphor in Lens
Semiconductor Light Emitting Device Including Oxide Layer
Application:
11/737,624 →
Publication:
US 2008/0259980
Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
Application:
11/829,799 →
Publication:
US 2007/0267646
III-Nitride Device Grown on Edge-Dislocation Template
Application:
11/833,921 →
Publication:
US 2009/0032828
Contact for a Semiconductor Light Emitting Device
Application:
11/956,984 →
Publication:
US 2009/0173956
Illumination Device Including Collimating Optics
Application:
11/956,992 →
Publication:
US 2009/0154137