Patent Assignment
Reel/Frame 046836/0845
Assignment of Assignor's Interest
Recorded: 2018-09-11
Pages: 2
Assignor
CHO, SEONGJAE
Executed: 2018-09-08
Assignee
GACHON UNIVERSITY OF INDUSTRY-ACADEMIC COOPERATION FOUNDATION
1342, SEONGNAM-DAERO, SUJEONG-GU, SEONGNAM-SI, GYEONGGI-DO, 13120, KOREA, REPUBLIC OF
Covered Property
(1)
One-Transistor Dram Cell Device Based on Polycrystalline Silicon with Finfet Structure and Fabrication Method Thereof
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.