Patent Assignment
Reel/Frame 046836/0899
Assignment of Assignor's Interest
Recorded: 2018-09-11
Pages: 2
Assignor
SHIN, HYUNGSOON
Executed: 2018-09-07
Assignee
EWHA UNIVERSITY - INDUSTRY COLLABORATION FOUNDATION
52, EWHAYEODAE-GIL, SEODAEMUN-GU, SEOUL, 03760, KOREA, REPUBLIC OF
Covered Property
(1)
One-Transistor Dram Cell Device Based on Polycrystalline Silicon with Finfet Structure and Fabrication Method Thereof
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.