IP Library › Assignment 048392/0098
Patent Assignment
Reel/Frame 048392/0098

Assignment of Assignor's Interest

Recorded: 2019-02-21 Pages: 3
Assignor
RICOH COMPANY, LTD.
Executed: 2019-02-01
Assignee
SCIOCS COMPANY LIMITED
880, ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI, 319-1418, JAPAN
Covered Properties (3)
Crystal Growth Method, Crystal Growth Apparatus, Group-Iii Nitride Crystal and Group-Iii Nitride Semiconductor Device
Patent: 6,780,239 →
Application: 09/981,848 →
Publication: US 2002/0046695
Production of a Gan Bulk Crystal Substrate and a Semiconductor Device Formed on a Gan Bulk Crystal Substrate
Patent: 7,250,640 →
Application: 10/601,301 →
Publication: US 2004/0031437
Crystal Growth Method, Crystal Growth Apparatus, Group-Iii Nitride Crystal and Group-Iii Nitride Semiconductor Device
Patent: 8,562,737 →
Application: 12/139,230 →
Publication: US 2008/0282969
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Oct 16, 2001
From: SARAYAMA, SEIJI; SHIMADA, MASAHIKO; YAMANE, HISANORI; AOKI, MASATO
To: RICOH COMPANY, LTD.
Reel/Frame 012286/0113 →
Assignment of Assignor's Interest Aug 20, 2020
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED; SCIOCS COMPANY LIMITED
Reel/Frame 053550/0309 →