Assignment of Assignor's Interest

Recorded: 2019-07-12 Pages: 11

Assignor

POWERCHIP TECHNOLOGY CORPORATION

Executed: 2019-06-28

Assignee

NO. 18, LI-HSIN RD. 1, HSINCHU SCIENCE PARK,, HSINCHU, TAIWAN

Covered Properties (3)

[Multi-Level Memory Cell]

Patent: 7,164,177 →

Application: 10/707,677 →

Publication: US 2005/0145919

[Non-Volatile Memory Device and Method of Manufacturing the Same]

Patent: 7,091,550 →

Application: 10/707,704 →

Publication: US 2005/0082600

Method of Defect Review

Patent: 7,071,011 →

Application: 10/707,824 →

Publication: US 2005/0159909

Related Assignments (1)

Other recorded transfers of the patents in this record — the chain of ownership.