Patent Assignment
Reel/Frame 051251/0787
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2019-12-11
Received: 2019-12-11
Pages: 8
Assignor
CYPRESS SEMICONDUCTOR CORPORATION
Executed: 2019-12-06
Assignee
LONGITUDE FLASH MEMORY SOLUTIONS LIMITED
BRACKEN ROAD, SANDYFORD, FIRST FLOOR, BLACKTHORN EXCHANGE, DUBLIN, IEX, D18 P3Y9, IRELAND
Covered Applications
(17)
METHOD TO SEPERATE STORAGE REGIONS IN THE MIRROR BIT DEVICE
App. No. 13/156,122
→
FABRICATION METHOD FOR SEMICONDUCTOR DEVICE HAVING LAMINATED ELECTRONIC CONDUCTOR ON BIT LINE
App. No. 13/081,777
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SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR
App. No. 13/026,075
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SEPERATION METHODS FOR SEMICONDUCTOR CHARGE ACCUMULATION LAYERS AND STRUCTURES THEREOF
App. No. 12/195,324
→
FABRICATION AND METHOD OF OPERATION OF MULTI-LEVEL MEMORY CELL ON SOI SUBSTRATE
App. No. 11/493,468
→
SEMICONDUCTOR DEVICE HAVING LAMINATED ELECTRONIC CONDUCTOR ON BIT LINE
App. No. 11/444,216
→
CHARGE SHARING TECHNIQUE DURING FLASH MEMORY PROGRAMMING
App. No. 11/229,530
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MULTI-LEVEL ONO FLASH PROGRAM ALGORITHM FOR THRESHOLD WIDTH CONTROL
App. No. 11/034,642
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SEMICONDUCTOR MEMORY CAPABLE OF BEING DRIVEN AT LOW VOLTAGE AND ITS MANUFACTURE METHOD
App. No. 10/649,994
→
METHOD OF IMPROVING DYNAMIC REFERENCE TRACKING FOR FLASH MEMORY UNIT
App. No. 10/357,879
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NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR CONTROLLING PROGRAMMING VOLTAGE OF NONVOLATILE SEMICONDUCTOR MEMORY
App. No. 10/259,761
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SYSTEM FOR PROGRAMMING A FLASH MEMORY DEVICE
App. No. 10/136,033
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CHARGE INJECTION
App. No. 10/050,483
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SOURCE SIDE SENSING SCHEME FOR VIRTUAL GROUND READ OF FLASH EPROM ARRAY WITH ADJACENT BIT PRECHARGE
App. No. 10/050,257
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SEMICONDUCTOR MEMORY CAPABLE OF BEING DRIVEN AT LOW VOLTAGE AND ITS MANUFACTURE METHOD
App. No. 09/973,743
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PROTECTING ACCESS TO MICROCONTROLLER MEMORY BLOCKS
App. No. 09/855,868
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Data retention characteristics as a result of high temperature bake
App. No. 09/795,849
→