Patent Assignment
Reel/Frame 060210/0144
Assignment of Assignor's Interest
Recorded: 2022-06-15
Pages: 6
Assignor
ALSEPHINA INNOVATIONS INC.
Executed: 2022-04-14
Assignee
WOLLOCHET SOLUTIONS LLC
CORPORATION TRUST CENTER 1209 ORANGE STREET, WILMINGTON, DELAWARE, 19801
Covered Properties
(7)
Asymmetric Finfet Devices
Asymmetric FinFET devices
Finfet Semiconductor Device Having Local Buried Oxide
Method of Utilizing Trench Silicide in a Gate Cross-Couple Construct
Finfet Semiconductor Device Having Local Buried Oxide
Application:
14/974,772 →
Publication:
US 2016/0111322
Method of Utilizing Trench Silicide in a Gate Cross-Couple Construct
Method of Utilizing Trench Silicide in a Gate Cross-Couple Construct