Patent Assignment
Reel/Frame 070695/0551
Assignment of Assignor's Interest
Recorded: 2025-04-01
Pages: 5
Assignor
OSAKA UNIVERSITY
Executed: 2025-03-21
Assignee
THE RITSUMEIKAN TRUST
8 NISHINOKYO-HIGASHI-TOGANO-CHO, NAKAGYO-KU, KYOTO, 604-8520, JAPAN
Covered Properties
(5)
Substrate for Nitride Semiconductor Device and Production Method Thereof, and Red Light Emitting Semiconductor Device and Production Method Thereof
Nitride Semiconductor Substrate, Manufacturing Method Therefor, and Semiconductor Device
Alinn Film, Two-Dimensional Photonic Crystal Resonator, Method for Manufacturing These, and Semiconductor Light-Emitting Element
Nitride Semiconductor Device and Substrate Thereof, Method for Forming Rare Earth Element-Added Nitride Layer, and Red-Light Emitting Device and Method for Manufacturing the Same
Near-Infrared Light Emitting Semiconductor Element and Method for Manufacturing Same
Related Assignments
(5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 19, 2015
From: FUJIWARA, YASUFUMI; KOIZUMI, ATSUSHI; TERAI, YOSHIKAZU
To: OSAKA UNIVERSITY
Reel/Frame 034981/0808 →
Assignment of Assignor's Interest
May 24, 2019
From: FUJIWARA, YASUFUMI; ZHU, WANXIN; KOIZUMI, ATSUSHI; MITCHELL, BRANDON
To: OSAKA UNIVERSITY
Reel/Frame 049280/0152 →
Assignment of Assignor's Interest
Aug 16, 2019
From: FUJIWARA, YASUFUMI; INABA, TOMOHIRO
To: OSAKA UNIVERSITY
Reel/Frame 050078/0330 →
Assignment of Assignor's Interest
Feb 25, 2021
From: ICHIKAWA, SHUHEI; FUJIWARA, YASUFUMI; TATEBAYASHI, JUN
To: OSAKA UNIVERSITY
Reel/Frame 055413/0520 →
Assignment of Assignor's Interest
Feb 28, 2022
From: ICHIKAWA, SHUHEI; YOSHIOKA, NAOKI; FUJIWARA, YASUFUMI; TATEBAYASHI, JUN
To: OSAKA UNIVERSITY
Reel/Frame 059121/0062 →