Nitride semiconductor device and substrate thereof, method for forming rare earth element-added nitride layer, and red-light emitting device and method for manufacturing the same
The purpose of the present invention is to provide a technique of manufacturing a nitride semiconductor layer with which, when producing a semiconductor device by forming a nitride semiconductor layer on off-angle inclined substrate, it is possible to stably supply high-quality semiconductor devices by preventing occurrence of a macro step using a material that is not likely to occur lattice strains or crystal defects by mixing with GaN and does not require continuous addition; and provided is a nitride semiconductor device which comprises a nitride semiconductor layer formed on a substrate, wherein the substrate is inclined at an off angle, a rare earth element-added nitride layer to which a rare earth element is added is formed on the substrate as a primed layer, and a nitride semiconductor layer is formed on the rare earth element-added nitride layer.
1. A nitride semiconductor device configured by providing a nitride semiconductor layer on a substrate, characterized in that
the substrate is an off-angle inclined substrate,
a rare earth element-added nitride layer to which a rare earth element is added is provided on the substrate as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface, and
a nitride semiconductor layer is provided on the rare earth element-added nitride layer.
2. The nitride semiconductor device according to claim 1 , characterized in that
the rare earth element-added nitride layer is a layer in which the rare earth element is added to GaN, InN, AlN, or a mixed crystal of any two or more of these.
3. The nitride semiconductor device according to claim 1 , characterized in that
the addition concentration of the rare earth element in the rare earth element-added nitride layer is 0.001 to 10 at %.
4. The nitride semiconductor device according to claim 1 , characterized in that the thickness of the rare earth element-added nitride layer of 0.1 nm or more.
5. The nitride semiconductor device according to claim 1 , characterized in that the rare earth element is Eu.
6. The nitride semiconductor device according to claim 1 , characterized in that the substrate is made of sapphire, SiC or Si; or GaN, InN, AlN or a mixed crystal of any two or more of GaN, InN and AlN.
7. The nitride semiconductor device according to claim 1 , which is any one of a light emitting device, a high frequency device and a high-power device.
8. The nitride semiconductor device according to claim 1 , characterized in that the off-angle inclined substrate has an off-angle greater than 0.25° and smaller than 2.0°.
9. A substrate used for manufacturing a nitride semiconductor device, in which a rare earth element-added nitride layer to which a rare earth element is added is provided on an off-angle inclined substrate as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface.
10. The substrate according to claim 9 , characterized in that the rare earth element-added nitride layer is a layer in which the rare earth element is added to GaN, InN, AlN, or a mixed crystal of any two or more of these.
11. The substrate according to claim 9 , characterized in that the addition concentration of the rare earth element in the rare earth element-added nitride layer is 0.001 to 10 at %.
12. The substrate according to claim 9 , characterized in that the thickness of the rare earth element-added nitride layer is 0.1 nm or more.
13. The substrate according to claim 9 , characterized in that the rare earth element is Eu.
14. The substrate according to claim 9 , characterized in that the off-angle inclined substrate is a nitride semiconductor made of sapphire, SiC or Si; or GaN, InN, AlN or a mixed crystal of any two or more of GaN, InN and AlN.
15. A red-light emitting device, characterized in that a rare earth element-added nitride layer in which Eu or Pr is added, as a rare earth element, to GaN, InN, AlN or a mixed crystal of any two or more of these is formed as an active layer, and the active layer is formed on the substrate according to claim 9 .
16. A red-light emitting device according to claim 15 , characterized in that the rare earth element-added nitride layer is a rare earth element-added nitride layer to which oxygen is co-added.
17. A method for forming a rare earth element-added nitride layer, where a rare earth element added nitride layer is formed on an off-angle inclined substrate; which has
a step of forming a rare earth element-free nitride layer on the off-angle inclined substrate, and
a step of forming a rare earth element-added nitride layer on the rare earth element-free nitride layer as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface; characterized in that
each of the above steps is performed by a series of forming steps using an organic metal vapor phase epitaxial method without taking out from the reaction vessel, and
the formation of the rare earth element-added nitride layer is performed at a temperature of 900 to 1100° C.
18. A method for manufacturing a nitride semiconductor device in which a nitride semiconductor layer is formed on the rare earth element-added nitride layer formed by using the method for forming a rare earth element-added nitride layer according to claim 17 .
19. A substrate characterized in that a rare earth element-free nitride layer and a rare earth element-added nitride layer as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface are stacked in this order on an off-angle inclined substrate.
20. A nitride semiconductor device which is formed by stacking a rare earth element-free nitride layer, a rare earth element-added nitride layer as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface, and a nitride semiconductor layer in this order on an off-angle inclined substrate.
21. A red-light emitting device, characterized in that a rare earth element-added nitride layer, in which Eu is added as a rare earth element to GaN, InN, AlN or a mixed crystal of any two or more of these, is formed as a base treatment layer to prevent the occurrence of a macro step and to flatten a surface on an off-angle inclined substrate.
22. A method for manufacturing the red-light emitting device according to claim 21 , wherein the rare earth element-added nitride layer in which Eu is added is formed on an off-angle inclined substrate by using an organometallic vapor phase epitaxial method.